Abstract: In a method of fabricating an electronic device, a first nMOS device structure and a second nMOS device structure are formed. Each nMOS device structure includes a gate oxide disposed on a p-type base material and a gate disposed on the gate oxide. N-type dopant implantation is performed to form source and drain regions in the p-type substate of the first nMOS device structure and source and drain regions in the p-type substate of the second nMOS device structure, and to further dope the gate of the first nMOS device structure n-type to form a first nMOS device with the gate doped n-type. P-type dopant implantation is performed to dope the gate of the second nMOS device structure p-type to form the second nMOS device structure with the gate anti-doped p-type.

Abstract: Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

Abstract: A method includes: receiving the semiconductor device, wherein the semiconductor device includes: a well region; a doped region; a plurality of gate electrodes; a plurality of source regions; and a plurality of drain regions, wherein the plurality of gate electrodes, the plurality of source region and the plurality of drain regions form a plurality of transistors; and a bulk region disposed in the doped region. A first distance measured between a first transistor of the plurality of transistors and the bulk region is greater than a second distance measured between a second transistor of the plurality of transistors and the bulk region. The method further includes: applying a first voltage to the plurality of drain regions, wherein a first avalanche current generated around the first transistor and shunted through the bulk region is greater than a second avalanche current generated around the second transistor and shunted through the bulk region.

Abstract: A levering device includes a coupling block, a gripper, an operating rod, and a constraint sleeve. The coupling block includes a coupling chamber, two guide slots in communication with the coupling chamber, an extension rod, and an axial hole axially cut through the extension rod in communication with the coupling chamber. The operating rod being axially movably inserted through the axial hole into a bearing chamber of a housing of a motor-driven water lifting device to stop against respective one end of a wheel axle of the motor-driven water lifting device. The gripper is attachable to the two guide slots of the coupling block and includes two gripper blocks and two claw bars respectively connected to the gripper blocks. The constraint sleeve is sleeved onto the coupling block to stop the two claw bars in the respective the guide slots.

Abstract: A levering device includes a coupling block, a gripper, an operating rod, and a constraint sleeve. The coupling block includes a coupling chamber, two guide slots in communication with the coupling chamber, an extension rod, and an axial hole axially cut through the extension rod in communication with the coupling chamber. The operating rod being axially movably inserted through the axial hole into a bearing chamber of a housing of a motor-driven water lifting device to stop against respective one end of a wheel axle of the motor-driven water lifting device. The gripper is attachable to the two guide slots of the coupling block and includes two gripper blocks and two claw bars respectively connected to the gripper blocks. The constraint sleeve is sleeved onto the coupling block to stop the two claw bars in the respective the guide slots.

Abstract: A switching regulator having a low start-up voltage includes a power stage and a switch control circuit. The switch control circuit includes a power control switch. The power control switch is formed by a low threshold voltage transistor having a first conductivity type in a semiconductor substrate. The low threshold voltage transistor having the first conductivity type includes a first lightly doped region having a second conductivity type which forms a channel region of the low threshold voltage transistor having the first conductivity type. The semiconductor substrate includes a second lightly doped region having the second conductivity type which is formed by a same manufacturing process as the first lightly doped region having the second conductivity type. The second lightly doped region having the second conductivity type forms adrift region of a high-voltage transistor having the second conductivity type in the semiconductor substrate.

Abstract: A switching regulator having a low start-up voltage includes a power stage and a switch control circuit. The switch control circuit includes a power control switch. The power control switch is formed by a low threshold voltage transistor having a first conductivity type in a semiconductor substrate. The low threshold voltage transistor having the first conductivity type includes a first lightly doped region having a second conductivity type which forms a channel region of the low threshold voltage transistor having the first conductivity type. The semiconductor substrate includes a second lightly doped region having the second conductivity type which is formed by a same manufacturing process as the first lightly doped region having the second conductivity type. The second lightly doped region having the second conductivity type forms adrift region of a high-voltage transistor having the second conductivity type in the semiconductor substrate.

Abstract: A motor-driven water lifting device of which the water lifting device includes housing having water-lifting wheel mounted in accommodation chamber therein, water supply pipe disposed at the periphery of the housing and having water inlet for guiding water into accommodation chamber and water outlet for guiding water out of accommodation chamber, and air inlet hole located on water supply pipe for allowing an external gas to be filled into accommodation chamber of housing so that when water is guided through the water inlet into accommodation chamber, the intake water is agitated by the water-lifting wheel and mixed with the external gas in the accommodation chamber to form a bubble water. The water molecules of the bubble water are finely mixed by mixing with the gas, and the fine bubble water is suitable for cleaning various objects to achieve an optimized cleaning effect.

Abstract: A process for heat-pressing a tape on a plastic carrier for a chip primarily comprises heating the plastic carrier to a predetermined temperature ranging from about 60 degrees centigrade to about 150 degrees centigrade so that an adhesive provided on the tape for adhering to the plastic carrier is melted such that the adhesive is in an optimum melted state and provides preferable adhesion force.