Abstract: An electronic device includes a substrate, a through hole, a buffer layer, a first circuit structure, and an electronic component. The substrate includes a first side and a second side opposite to the first side. The through hole penetrates the substrate. The buffer layer is disposed on the first side of the substrate, the second side of the substrate, and an inner wall of the through hole. The first circuit structure is disposed on the first side. The electronic component is disposed on the first circuit structure. The buffer layer includes a plurality of layers.

Abstract: A packaging device and a manufacturing method thereof are provided. The packaging device includes an electronic unit, a conductive layer, a buffer layer, an insulation layer, and a first circuit structure. The electronic unit includes a pad. The conductive layer is disposed on the pad. The buffer layer is disposed on the conductive layer. The insulation layer surrounds the electronic unit and the buffer layer. The first circuit structure is electrically connected to the electronic unit. A part of the conductive layer is located between the electronic unit and the buffer layer, and an activity of the conductive layer is less than an activity of the pad.

Abstract: This disclosure provides an electronic device, which includes a core substrate, having a first surface and a second surface opposite to each other; a first through hole disposed within the core substrate and connected to the first surface and the second surface; a second through hole disposed within the core substrate and connected to the first surface and the second surface; and a conductive material filled in the first through hole and the second through hole; wherein in a sectional structure of the electronic device, a sectional profile of the first through hole is different from a sectional profile of the second through hole.

Abstract: An electronic device includes a transparent core substrate and a first buffer layer. The transparent core substrate includes a through hole, wherein the transparent core substrate includes a first transparent core layer and a second transparent core layer. The first transparent core layer includes a first sub-through hole. The second transparent core layer is bonded to the first transparent core layer, wherein the second transparent core layer includes a second sub-through hole, and the first sub-through hole overlaps the second sub-through hole to form the through hole. The first buffer layer is disposed in at least a part of the through hole.

Abstract: An electronic device includes a substrate having opposite first and second surfaces and a through hole having an inner wall connected to the first and second surfaces, a buffer layer covering the first and second surfaces and the inner wall, a conductor disposed in the through hole, a first circuit structure disposed on the first surface, an electronic element disposed on the first circuit structure, and first connectors disposed on the second surface and electrically connected to the electronic element through the conductor and the first circuit structure. The through hole has a width W and a depth D, and W/D is greater than or equal to 0.01 and less than or equal to 0.5. A thickness T of the buffer layer is greater than or equal to 0.01 ?m and less than or equal to 10 ?m. A manufacturing method of an electronic device is also provided.

Abstract: An electronic device having a central area and a peripheral area surrounding the central area is provided. The electronic device includes a substrate, a through hole, a buffer layer, a first circuit structure, an electronic component and a first pad. The substrate has a first surface and a second surface opposite to the first surface. The through hole penetrates through the substrate and has a first through hole and a second through hole. The buffer layer covers the first surface, the second surface, an inner wall of the first through hole and an inner wall of the second through hole. The first circuit structure is disposed on the first surface. The first through hole corresponds to the central area, the second through hole corresponds to the peripheral area, and a width of the second through hole is greater than a width of the first through hole.

Abstract: A manufacturing method of an electronic device having a through-hole substrate includes: irradiating a partial region on two opposite surfaces of a substrate with a laser; and performing a through-hole formation step on the partial region of the substrate. The through-hole formation step includes: performing an etching step to form opposite etching profiles in the partial region on the two opposite surfaces of the substrate; performing a buffer layer coating step to form a buffer layer on the two opposite surfaces of the substrate and the opposite etching profiles; and repeating the etching step and the buffer layer coating step until the opposite etching profiles form a through hole. An electronic device is also provided.

Abstract: An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.

Abstract: An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.

Abstract: An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.

Abstract: An electronic device and a method for manufacturing the same are disclosed. The method for manufacturing the electronic device includes the following steps: providing a substrate; forming a metal layer on the substrate, wherein the metal layer has a first surface; forming a first insulating layer on the first surface of the metal layer; forming a second insulating layer on the first insulating layer; etching the first insulating layer and the second insulating layer to form a contact hole, wherein the contact hole exposes a portion of the first surface; cleaning the portion of the first surface exposed by the contact hole with a solution; and forming a transparent conductive layer on the second insulating layer, wherein the transparent conductive layer electrically connects with the metal layer.

Abstract: An etching solution and a manufacturing method of a display are provided. The etching solution includes hydrogen peroxide (H2O2), succinic acid, malonic acid, acetic acid, sulfuric acid, 1-amino-2-propanol, 5-amino-1H-tetrazole, N,N,N?N?-tetrakis(2-hydroxypropyl) ethylenediamine (EDTP) and glycine homogenously mixed in deionized water. Hydrogen peroxide is in an amount of 5-10 wt % of the etching solution, succinic acid is in an amount of 0.5-10 wt % of the etching solution, malonic acid is in an amount of 0.5-10 wt % of the etching solution, acetic acid is in an amount of 1-10 wt % of the etching solution, sulfuric acid is in an amount of 0.5-5 wt % of the etching solution, 1-amino-2-propanol is in an amount of 1-20 wt % of the etching solution, 5-amino-1H-tetrazole is in an amount of 0.01-0.5 wt % of the etching solution, EDTP is in an amount of 1-15 wt % of the etching solution, and glycine is in an amount of 1-5 wt % of the etching solution.

Abstract: An etching solution and a manufacturing method of a display are provided. The etching solution includes hydrogen peroxide (H2O2), succinic acid, malonic acid, acetic acid, sulfuric acid, 1-amino-2-propanol, 5-amino-1H-tetrazole, N,N,N?N?-tetrakis(2-hydroxypropyl) ethylenediamine (EDTP) and glycine homogenously mixed in deionized water. Hydrogen peroxide is in an amount of 5-10 wt % of the etching solution, succinic acid is in an amount of 0.5-10 wt % of the etching solution, malonic acid is in an amount of 0.5-10 wt % of the etching solution, acetic acid is in an amount of 1-10 wt % of the etching solution, sulfuric acid is in an amount of 0.5-5 wt % of the etching solution, 1-amino-2-propanol is in an amount of 1-20 wt % of the etching solution, 5-amino-1H-tetrazole is in an amount of 0.01-0.5 wt % of the etching solution, EDTP is in an amount of 1-15 wt % of the etching solution, and glycine is in an amount of 1-5 wt % of the etching solution.

Abstract: An electronic apparatus and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate with a first surface and a second surface; an electronic unit layer disposed on the first surface of the substrate; a residue layer disposed on the second surface of the substrate, wherein a material of the residue layer comprises: a compound containing at least one functional group selected from the group consisting of aryl, nitro and ketone.

Abstract: An electronic device and a method for manufacturing the same are disclosed. The electronic device of the present disclosure comprises: a target unit comprising an electronic unit layer; and small molecule residues adhered on a side of the target unit, wherein the small molecule residues are at least one selected from the group consisting of and R1, R1?, R2, R2?, R3, R3?, R4, R5, R6, R7, R8 are defined in the specification.

Abstract: An electronic apparatus and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate with a first surface and a second surface; an electronic unit layer disposed on the first surface of the substrate; a residue layer disposed on the second surface of the substrate, wherein a material of the residue layer comprises: a compound containing at least one functional group selected from the group consisting of aryl, nitro and ketone.