Abstract: A signal receiver includes a data receiver and a data strobe signal receiver. The data receiver includes a plurality of current mode logic circuits and a plurality of data latches. A first stage current mode logic circuit receives a data signal, and a final stage current mode logic circuit outputs an amplified data signal. The plurality of data latches receive the amplified data signal, wherein each of the data latches sums the amplified data signal and a plurality of feedback data to obtain a summing data, and latches the summing data to output an output data according to one of a plurality of amplified data strobe signals. The data strobe signal receiver receives a data strobe signal, and generates the plurality of amplified data strobe signals by dividing a frequency of the data strobe signal.

Abstract: An electronic device is adapted to be electrically connected with an input device and at least one display unit. The electronic device includes a processor configured to convert an input instruction from the input device to a corresponding a control instruction and transmit the control instruction to the display unit. The display unit displays the OSD menu or executes the adjustment function of the OSD menu according to the control instruction.

Abstract: A memory storage device having a rewritable non-volatile memory module, a first connection interface unit, a second connection interface unit, a power management circuit and a memory control circuit unit is provided. When an external power supply device is electrically connected to the second connection interface unit, the power management circuit receives a second power supply voltage from the external power supply device via the second connection interface unit, supplies an operation voltage to the rewritable non-volatile memory module and the memory control circuit unit and supplies the second power supply voltage to a host device. When the external power supply device is electrically disconnected with the second connection interface unit, the power management circuit receives a first power supply voltage from the host device via the first connection interface unit and supplies the operation voltage to the memory control circuit unit and the rewritable non-volatile memory module.

Abstract: A memory storage device having a rewritable non-volatile memory module, a first connection interface unit, a second connection interface unit, a power management circuit and a memory control circuit unit is provided. When an external power supply device is electrically connected to the second connection interface unit, the power management circuit receives a second power supply voltage from the external power supply device via the second connection interface unit, supplies an operation voltage to the rewritable non-volatile memory module and the memory control circuit unit and supplies the second power supply voltage to a host device. When the external power supply device is electrically disconnected with the second connection interface unit, the power management circuit receives a first power supply voltage from the host device via the first connection interface unit and supplies the operation voltage to the memory control circuit unit and the rewritable non-volatile memory module.

Abstract: The embodiments of the present disclosure provide an AMOLED panel and method of encapsulating the same. The AMOLED panel comprises: a substrate; a plurality of TFTs arranged on the substrate spaced from each other; a cover, at a surface towards the substrate, the cover is provided with recesses corresponding to the plurality of TFTs and spacing parts formed between recesses; the cover covers on the substrate and TFTs; each TFT is received in each recess correspondingly, and the spacing parts are positioned between neighboring TFTs respectively; and a sealing layer connecting the spacing parts to the substrate. The present disclosure facilitates to control the flatness of the AMOLED panel.

Abstract: ESD protection circuit with EOS immunity is provided, which includes a first connection circuit, a first EOS control circuit formed by at least a diode, and an ESD clamp respectively coupled between a pad, a first clamp node, an I/O clamp node and a second source node. When the ESD clamp detects ESD through the I/O clamp node, it is triggered to conduct from the I/O clamp node to the second source node. When the pad receives EOS, the first EOS control circuit provides a cross voltage between the first clamp node and the I/O clamp node, such that a voltage of the I/O clamp node becomes less than a characteristic voltage of the ESD clamp to prevent the ESD clamp from reverse conducting.

Abstract: ESD protection circuit with EOS immunity is provided, which includes a first connection circuit, a first EOS control circuit formed by at least a diode, and an ESD clamp respectively coupled between a pad, a first clamp node, an I/O clamp node and a second source node. When the ESD clamp detects ESD through the I/O clamp node, it is triggered to conduct from the I/O clamp node to the second source node. When the pad receives EOS, the first EOS control circuit provides a cross voltage between the first clamp node and the I/O clamp node, such that a voltage of the I/O clamp node becomes less than a characteristic voltage of the ESD clamp to prevent the ESD clamp from reverse conducting.

Abstract: A low-power delay buffer circuit is provided, which utilizes a ring counter as address decoder and a latch array for memory. To reduce power consumption, a gated-clock driver tree is applied to the ring-counter addressing architecture. Moreover, a similar gated-driver tree is applied to the input and output ports of the latch array. The delay buffer circuit not only could achieve a power consumption lower than SRAM-based delay buffers, but also could operation under high frequencies and take up less layout area than SRAM-based delay buffers.

Abstract: A low-power delay buffer circuit is provided, which utilizes a ring counter as address decoder and a latch array for memory. To reduce power consumption, a gated-clock driver tree is applied to the ring-counter addressing architecture. Moreover, a similar gated-driver tree is applied to the input and output ports of the latch array. The delay buffer circuit not only could achieve a power consumption lower than SRAM-based delay buffers, but also could operation under high frequencies and take up less layout area than SRAM-based delay buffers.