Abstract: The present disclosure is directed to a semiconductor platform having a printed circuit board with an interposer coupled thereto. The interposer includes a low-resistance metal layer that acts as a power corridor, and a first non-conductive layer and a second non-conductive layer, respectively, positioned on the top and bottom surfaces of the metal layer. In addition, the interposer also includes a plurality of vertical interconnects that provide electrical connections through the interposer. A semiconductor package and other components may be coupled to the interposer, for which the interposer provides a power corridor for the semiconductor package and the components, and to the print circuit board via the plurality of vertical interconnects.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to a package that includes a die, which may be a processor die, coupled with a first side of a substrate and one or more dies, which may be one or more memory dies, that are coupled with a second side of the substrate opposite the first side of the substrate. All or part of the memory dies may be directly below the die with respect to a plane of the substrate and may be partially or completely within a molding. Other embodiments may be described and/or claimed.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for a connector for a modular memory package that includes one or more memory dies on a substrate, where the connector directly electrically couples electrical contacts at an edge and on each side the substrate of the memory package to electrical contacts at an edge and on each side of another substrate that includes a compute die. The connector may include a first plurality of leads that are substantially parallel with each other, and a second plurality of leads that are substantially parallel with each other that are below the first plurality of leads and electrically couple the two substrates. Other embodiments may be described and/or claimed.

Abstract: A semiconductor package is provided including: a package substrate with a top surface, wherein the top surface extends to a peripheral side surface of the package substrate; a stiffener with a lateral portion and a basket portion, wherein the lateral portion is positioned over the top surface of the package substrate and the basket portion overhangs from the top surface of the package substrate adjacent to the peripheral side surface of the package substrate; at least one semiconductor die positioned in the basket portion of the stiffener; and at least one wire attached to the at least one semiconductor die and extending out of the basket portion of the stiffener.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: A semiconductor package including a package substrate including a bottom surface; a first plurality of solder balls connected to the bottom surface of the package substrate; a second plurality of solder balls connected to a motherboard; and a shielding assembly interposed between the first and the second plurality of solder balls and configured to shield each solder ball of the first and second plurality of solder balls from electromagnetic interference.

Abstract: Embodiments disclosed herein include a printed circuit board (PCB). In an embodiment, the PCB comprises a substrate with a first surface and a second surface opposite from the first surface. In an embodiment, a first slot is through a thickness of the substrate, and a second slot is through the thickness of the substrate, where the first slot is parallel to the second slot. In an embodiment, a metal plate is provided on the PCB. In an embodiment the metal plate comprises a first portion over the first surface of the substrate between the first slot and the second slot, a second portion connected to the first portion, wherein the second portion is in the first slot, and a third portion connected to the first portion, wherein the third portion is in the second slot.

Abstract: An electronic system includes a first substrate including first solder bumps on a bottom surface, the first solder bumps having a first solder bump surface opposite from the bottom surface; a processor integrated circuit (IC) die including at least one processor mounted on a top surface of the first substrate; and a companion component to the processor IC. The companion component includes a second substrate, second solder bumps, and third solder bumps. The second solder bumps include a second solder bump surface, and the third solder bumps include a third solder bump surface at a different height than the second solder bump surface. The second solder bump surface contacts the top surface of the first substrate and the third solder bump surface is at a same height as the first solder bump surface.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: Methods and apparatus to reduce thickness of on-package memory architectures are disclosed. An on-package memory architecture includes a memory die; a bonding pad including a first surface and a second surface opposite the first surface; a wire bond electrically coupling the memory die to the first surface of the bonding pad; and a metal stub protruding from the second surface of the bonding pad. The metal stub is to electrically couple with a contact pad on a package substrate of an integrated circuit (IC) package.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Integrated circuit (IC) packages with On Package Memory (OPM) architectures are disclosed herein. An example IC package includes a substrate having a first side and a second side opposite the first side, a semiconductor die mounted on the first side of the substrate, and a die pad on the first side of the substrate. The die is electrically coupled to the die pad. The IC package also includes a memory pad on the first side of the substrate. The memory pad is to be electrically coupled to a memory mounted on the first side of the substrate. The IC package further includes a ball on the second side of the substrate, and a memory interconnect in the substrate electrically coupling the die pad, the memory pad, and the ball.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Disclosed embodiments include folded, top-to-bottom interconnects that couple a die side of an integrated-circuit package substrate, to a board as a complement to a ball-grid array for a flip-chip-mounted integrated-circuit die on the die side. The folded, top-to-bottom interconnect is in a molded frame that forms a perimeter around an infield to receive at least one flip-chip IC die. Power, ground and I/O interconnections shunt around the package substrate, and such shunting includes voltage regulation that need not be routed through the package substrate.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: A molded frame interconnect includes power, ground and signal frame interconnects in a molded mass, that encloses an integrated-circuit package precursor, which is inserted into the frame, and coupled to the frame interconnects by a build-up redistribution layer.