Patents by Inventor Poh Ching Sim

Poh Ching Sim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reduction of fluorine contamination of bond pads of semiconductor devices
    Patent number: 9059110
    Abstract: A method of reducing contamination of contact pads in a metallization system of a semiconductor device. Fluorine contamination of contact pads in a semiconductor device can be reduced by appropriately covering the sidewall portions of a metallization system in the scribe lane in order to significantly reduce or suppress the out diffusion of fluorine species, which may react with the exposed surface areas of the contact pads. The quality of the bond contacts is enhanced, possibly without requiring any modifications in terms of design rules and electrical specifications.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: June 16, 2015
    Assignee: X-Fab Semiconductor Foundries AG
    Inventors: Hyung Sun Yook, Tsui Ping Chu, Poh Ching Sim
  • Semiconductor device comprising a metal system including a separate inductor metal layer
    Patent number: 8736021
    Abstract: In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system.
    Type: Grant
    Filed: May 15, 2009
    Date of Patent: May 27, 2014
    Assignee: X-FAB Semiconductor Foundries AG
    Inventors: Tsui Ping Chu, Hyung Sun Yook, Poh Ching Sim
  • REDUCTION OF FLUORINE CONTAMINATION OF BOND PADS OF SEMICONDUCTOR DEVICES
    Publication number: 20120241914
    Abstract: A method of reducing contamination of contact pads in a metallization system of a semiconductor device. Fluorine contamination of contact pads in a semiconductor device can be reduced by appropriately covering the sidewall portions of a metallization system in the scribe lane in order to significantly reduce or suppress the out diffusion of fluorine species, which may react with the exposed surface areas of the contact pads. The quality of the bond contacts is enhanced, possibly without requiring any modifications in terms of design rules and electrical specifications.
    Type: Application
    Filed: September 4, 2009
    Publication date: September 27, 2012
    Applicant: X-Fab Semiconductor Foundries AG
    Inventors: Hyung Sun Yook, Tsui Ping Chu, Poh Ching Sim
  • Semiconductor Device Comprising a Metal System Including a Separate Inductor Metal Layer
    Publication number: 20120068303
    Abstract: In an integrated circuit an inductor metal layer is provided separately to the top metal layer, which includes the power and signal routing metal lines. Consequently, high performance inductors can be provided, for instance by using a moderately high metal thickness substantially without requiring significant modifications of the remaining metallization system.
    Type: Application
    Filed: May 15, 2009
    Publication date: March 22, 2012
    Inventors: Tsui Ping Chu, Hyung Sun Yook, Poh Ching Sim