Patents by Inventor Poh Ling Fu

Poh Ling Fu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a laser annealed semiconductor layer
    Patent number: 8816351
    Abstract: A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
    Type: Grant
    Filed: November 21, 2011
    Date of Patent: August 26, 2014
    Assignee: Japan Display Inc.
    Inventors: Kian Kiat Lim, Atsushi Nakamura, Kai Pheng Tan, Eng Soon Lim, Poh Ling Fu, Takaaki Kamimura
  • METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY
    Publication number: 20120061678
    Abstract: A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
    Type: Application
    Filed: November 21, 2011
    Publication date: March 15, 2012
    Inventors: Kian Kiat Lim, Atsushi Nakamura, Kai Pheng Tan, Eng Soon Lim, Poh Ling Fu, Takaai Kamimura
  • Method of laser annealing semiconductor layer and semiconductor devices produced thereby
    Patent number: 8076186
    Abstract: A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: December 13, 2011
    Assignee: Toshiba Matsushita Display Technology Co., Ltd.
    Inventors: Kian Kiat Lim, Atsushi Nakamura, Kai Pheng Tan, Eng Soon Lim, Poh Ling Fu, Takaaki Kamimura