Patents by Inventor Po-Lin Hsu
Po-Lin Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240196756Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.Type: ApplicationFiled: February 26, 2024Publication date: June 13, 2024Applicant: United Microelectronics Corp.Inventors: Hui-Lin Wang, Wei Chen, Po-Kai Hsu, Yu-Ping Wang, Hung-Yueh Chen
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Patent number: 12009033Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.Type: GrantFiled: June 20, 2023Date of Patent: June 11, 2024Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Ming Huang, Wen-Tuo Huang, Yu-Hsiang Yang, Yu-Ling Hsu, Wei-Lin Chang, Chia-Sheng Lin, ShihKuang Yang, Yu-Chun Chang, Hung-Ling Shih, Po-Wei Liu, Shih-Hsien Chen
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Publication number: 20240172456Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.Type: ApplicationFiled: January 23, 2024Publication date: May 23, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hui-Lin Wang, Ching-Hua Hsu, Yi-Yu Lin, Ju-Chun Fan, Hung-Yueh Chen
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Publication number: 20240130246Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.Type: ApplicationFiled: December 25, 2023Publication date: April 18, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
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Patent number: 11956972Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.Type: GrantFiled: April 13, 2021Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Si-Han Tsai, Ching-Hua Hsu, Chen-Yi Weng, Po-Kai Hsu
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Patent number: 11957061Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.Type: GrantFiled: May 23, 2023Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Po-Kai Hsu, Ju-Chun Fan, Yi-Yu Lin, Ching-Hua Hsu, Hung-Yueh Chen
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Patent number: 11950513Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.Type: GrantFiled: July 5, 2022Date of Patent: April 2, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Wei Chen, Po-Kai Hsu, Yu-Ping Wang, Hung-Yueh Chen
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Publication number: 20240099154Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.Type: ApplicationFiled: November 21, 2023Publication date: March 21, 2024Applicant: UNITED MICROELECTRONICS CORPInventors: Hui-Lin Wang, Si-Han Tsai, Dong-Ming Wu, Chen-Yi Weng, Ching-Hua Hsu, Ju-Chun Fan, Yi-Yu Lin, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang
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Patent number: 11927799Abstract: A data transmission system is disclosed. The data transmission system includes at least one signal processing device, at least one conversion device, at least one antenna device, and at least one flexible printed circuit board. The at least one signal processing device is configured to generate or receive at least one data. The at least one conversion device is configured to transform between the at least one data and an optical signal. The at least one antenna device is configured to obtain the at least one data according to the optical signal, and configured to receive or transmit the at least one data wirelessly. The at least one flexible printed circuit board includes at least one conductive layer and at least one optical waveguide layer. The at least one optical waveguide layer is configured to transmit the optical signal.Type: GrantFiled: December 31, 2020Date of Patent: March 12, 2024Inventors: Po-Kuan Shen, Chun-Chiang Yen, Chiu-Lin Yu, Kai-Lun Han, Jenq-Yang Chang, Mao-Jen Wu, Chao-Chieh Hsu
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Patent number: 11925035Abstract: A hybrid random access memory for a system-on-chip (SOC), including a semiconductor substrate with a MRAM region and a ReRAM region, a first dielectric layer on the semiconductor substrate, multiple ReRAM cells in the first dielectric layer on the ReRAM region, a second dielectric layer above the first dielectric layer, and multiple MRAM cells in the second dielectric layer on the MRAM region.Type: GrantFiled: October 26, 2022Date of Patent: March 5, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Kai Hsu, Hui-Lin Wang, Ching-Hua Hsu, Yi-Yu Lin, Ju-Chun Fan, Hung-Yueh Chen
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Patent number: 11917923Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.Type: GrantFiled: April 28, 2021Date of Patent: February 27, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Ching-Hua Hsu, Si-Han Tsai, Shun-Yu Huang, Chen-Yi Weng, Ju-Chun Fan, Che-Wei Chang, Yi-Yu Lin, Po-Kai Hsu, Jing-Yin Jhang, Ya-Jyuan Hung
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Patent number: 10966560Abstract: A fully automated cooking system achieves unmanned and fully automated meal cooking through a mobile transport device, multiple cooking devices, multiple heating devices and other peripheral devices. The mobile transport device uses a circulating conveyor belt to form a cyclic travel path, along which a feeding station area, a heating station area, a discharging station area and a cleaning station area are defined. Each station area is provided with corresponding equipment, such as feeding device, heating device and cleaning device. Each cooking device includes a swivel mechanism disposed on the circulating conveyor belt, and a heating container coupled to the swivel mechanism. The heating container can stir the ingredients when heated and pour out food when cooking is complete. The heating device can be an electric heating device or a fuel gas heating device for heating the heating container to cook food, thereby achieving fully automated cooking.Type: GrantFiled: August 7, 2019Date of Patent: April 6, 2021Inventors: Po-Lin Hsu, Chien-Yu Hsu
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Publication number: 20210038011Abstract: A fully automated cooking system achieves unmanned and fully automated meal cooking through a mobile transport device, multiple cooking devices, multiple heating devices and other peripheral devices. The mobile transport device uses a circulating conveyor belt to form a cyclic travel path, along which a feeding station area, a heating station area, a discharging station area and a cleaning station area are defined. Each station area is provided with corresponding equipment, such as feeding device, heating device and cleaning device. Each cooking device includes a swivel mechanism disposed on the circulating conveyor belt, and a heating container coupled to the swivel mechanism. The heating container can stir the ingredients when heated and pour out food when cooking is complete. The heating device can be an electric heating device or a fuel gas heating device for heating the heating container to cook food, thereby achieving fully automated cooking.Type: ApplicationFiled: August 7, 2019Publication date: February 11, 2021Inventors: Po-Lin Hsu, Chien-Yu Hsu
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Patent number: 9370613Abstract: An axial-flow blood pump has a rotatable impeller assembly rotatable about an axis and itself having a radially projecting blade and permanent magnets, A stationary stator assembly has stator windings interacting with the permanent magnets and a bearing system supporting the rotatable impeller assembly for rotation about the axis relative to the stator assembly. A stent implantable into a blood vessel is connected to ends of supports for coaxially mounting the stator assembly carrying the impeller assembly in the stent.Type: GrantFiled: July 17, 2013Date of Patent: June 21, 2016Assignee: RHEINISCH-WESTFAELISCHE-TECHNISCHE HOCHSCHULE AACHENInventors: Po-Lin Hsu, Ulrich Steinseifer, Jack Parker, Ruediger Autschbach
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Publication number: 20150141739Abstract: The invention relates to an axial flow blood pump device comprising an integrated electromagnetic drive with a stationary stator assembly and a rotatable impeller assembly, wherein the stationary stator assembly at least comprises stator windings (3) and a bearing system (4) supporting the rotatable impeller assembly, the impeller assembly comprising at least one blade (9) and permanent magnets (10) interacting with the stator windings (3), wherein the stationary stator assembly comprises supporting elements (8) for mounting, in particular coaxially mounting the device in the interior of an anchoring system (7) being implantable into a vessel.Type: ApplicationFiled: July 17, 2013Publication date: May 21, 2015Inventors: Po-Lin Hsu, Ulrich Steinseifer, Jack Parker, Ruediger Autschbach
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Patent number: 5715557Abstract: An automatic outer wall cleaning machine for a high-rise building comprises a shell, an actuator, two drum brushes and a plurality of suction cup units, in which the shell can be suspended outside high-rise buildings with cables for raising and lowering, a guide rail is placed at each lateral side in the shell to provide a support for a motor which is controlled by an actuator for upward and downward displacement, the motor's transmission shaft is extended out of the shell through a guide slot and connects to a drum brush at each side, and the drum brush is protected by a shield. Each drum brush is designed with a sleeve along its central line for insertion of the transmission shaft, and water outlets connecting to each other are designed therein. An end of the sleeve is fitted with a rotary connector for feeding of water. By rotation, raising and lowering of the drum brushes and feeding of water jet into the sleeve of the drum brushes, cleaning action is performed.Type: GrantFiled: January 15, 1997Date of Patent: February 10, 1998Inventor: Po-Lin Hsu