Patents by Inventor Pong-Ok Park

Pong-Ok Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Display device
    Patent number: 9406264
    Abstract: A display device includes: a plurality of gate lines extending in a row direction; a plurality of data lines; a plurality of pixels connected to the gate lines and the data lines; and a gate signal supply line connected with at least two gate lines among the plurality of gate lines. At least three data lines among the plurality of data lines are between two pixels adjacent to each other in a row direction.
    Type: Grant
    Filed: November 7, 2012
    Date of Patent: August 2, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jang Mi Kang, Kyung-Hoon Kim, Il Gon Kim, Pong Ok Park
  • DISPLAY DEVICE
    Publication number: 20130321251
    Abstract: A display device includes: a plurality of gate lines extending in a row direction; a plurality of data lines; a plurality of pixels connected to the gate lines and the data lines; and a gate signal supply line connected with at least two gate lines among the plurality of gate lines. At least three data lines among the plurality of data lines are between two pixels adjacent to each other in a row direction.
    Type: Application
    Filed: November 7, 2012
    Publication date: December 5, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jang Mi KANG, Kyung-Hoon KIM, Il Gon KIM, Pong Ok PARK
  • ETCHANT FOR SIGNAL WIRE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING ETCHANT
    Publication number: 20080224093
    Abstract: Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)xLy, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
    Type: Application
    Filed: April 18, 2008
    Publication date: September 18, 2008
    Inventors: Hong-Sick Park, Hong-Je Cho, Sung-Chul Kang, Pong-Ok Park, An-Na Park
  • Etchant for signal wire and method of manufacturing thin film transistor array panel using etchant
    Patent number: 7371622
    Abstract: Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: May 13, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sick Park, Hong-Je Cho, Sung-Chul Kang, Pong-Ok Park, An-Na Park
  • Method of forming a metal pattern and a method of fabricating tft array panel by using the same
    Publication number: 20060011912
    Abstract: With a metal pattern formation process and a method of manufacturing a thin film transistor array panel using the metal pattern formation process, an organometallic layer is formed by coating an organometallic complex containing metal. The organometallic layer is exposed to light through a photo mask, and developed to form a metal pattern.
    Type: Application
    Filed: July 24, 2002
    Publication date: January 19, 2006
    Inventors: Hong-Sick Park, Sung-Chul Kang, Hong-Je Cho, An-Na Park, Pong-ok Park, Chang-Oh Jeong
  • Etchant for signal wire and method of manufacturing thin film transistor array panel using etchant
    Publication number: 20040242017
    Abstract: Gate lines including a lower Al—Nd layer and an upper MoW layer, data lines including a MoW layer, and pixel electrodes including an IZO layer are patterned using a single etchant. The etchant contains a phosphoric acid of about 50-60%, a nitric acid of about 6-10%, an acetic acid of about 15-25%, a stabilizer of about 2-5% stabilizer, and deionized water. The stabilizer includes oxy-hydride inorganic acid represented by M(OH)XLY, where M includes at least one of Zn, Sn, Cr, Al, Ba, Fe, Ti, Si and B, L includes at least one of H2O, NH3, CN and NH2R (where R is alkyl group), X is 2 or 3, and Y is 0, 1, 2 or 3.
    Type: Application
    Filed: February 6, 2004
    Publication date: December 2, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hong-Sick Park, Hong-Je Cho, Sung-Chul Kang, Pong-Ok Park, An-Na Park