Abstract: Methods for forming a graft copolymer of a poly(vinylidene fluoride)-based polymer and at least one type of electrically conductive polymer, wherein the electrically conductive polymer is grafted on the poly(vinylidene fluoride)-based polymer are provided. The methods comprise a) irradiating a poly(vinylidene fluoride)-based polymer with a stream of electrically charged particles; b) forming a solution comprising the irradiated poly(vinylidene fluoride)-based polymer, an electrically conductive monomer and an acid in a suitable solvent; and c) adding an oxidant to the solution to form the graft copolymer. Graft copolymers of a poly(vinylidene fluoride)-based polymer and at least one type of electrically conductive polymer, wherein the electrically conductive polymer is grafted on the poly(vinylidene fluoride)-based polymer, nanocomposite materials comprising the graft copolymer, and multilayer capacitors comprising the nanocomposite material are also provided.

Abstract: Methods of preparing monodispersed polydopamine nano- or microspheres are provided. The methods comprise providing a solvent system comprising water and at least one alcohol having the formula R—OH, wherein R is selected from the group consisting of optionally substituted C1-C6 alkyl, optionally substituted C2-C6 alkenyl, optionally substituted C2-C6 alkynyl, optionally substituted C3-C6 cycloalkyl, optionally substituted C3-C6 cycloalkenyl, and optionally substituted C6-C7 aryl; adding dopamine to said solvent system to form a reaction mixture; and agitating said reaction mixture for a time period of 1 to 10 days to form said monodispersed polydopamine nano- or microspheres. Methods of preparing carbon and hollow metal or metal oxide nano- or microspheres using the polydopamine nano- or microspheres are also provided.

Abstract: An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

Abstract: A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.

Abstract: A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method BB includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60° C. to 225° C. The sol-gel film made by the method, and an organic thin-film Si wafer Si wafer transistor incorporating the sol-gel film are also disclosed.

Abstract: An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

Abstract: A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated circuit components and a silicon substrate; incorporating nitrogen into the processed substrate; depositing nickel onto the processed substrate; annealing the processed substrate so as to form nickel mono-silicide; removing the unreacted nickel; and performing a series procedures to complete integrated circuit fabrication. This nickel salicide process increases the annealing temperature range for which a continuous, thin nickel mono-silicide layer can be formed on silicon by salicidation. It also delays the onset of agglomeration of nickel mono-silicide thin-films to a higher annealing temperature. Moreover, this nickel salicide process delays the transformation from nickel mono-silicide to higher resistivity nickel di-silicide, to higher annealing temperature.

Abstract: A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated circuit components and a silicon substrate; incorporating nitrogen into the processed substrate; depositing nickel onto the processed substrate; annealing the processed substrate so as to form nickel mono-silicide; removing the unreacted nickel; and performing a series procedures to complete integrated circuit fabrication. This nickel salicide process increases the annealing temperature range for which a continuous, thin nickel mono-silicide layer can be formed on silicon by salicidation. It also delays the onset of agglomeration of nickel mono-silicide thin-films to a higher annealing temperature. Moreover, this nickel salicide process delays the transformation from nickel mono-silicide to higher resistivity nickel di-silicide, to higher annealing temperature.

Abstract: A method and apparatus for performing nickel salicidation is disclosed. The nickel salicide process typically includes: forming a processed substrate including partially fabricated integrated circuit components and a silicon substrate; incorporating nitrogen into the processed substrate; depositing nickel onto the processed substrate; annealing the processed substrate so as to form nickel mono-silicide; removing the unreacted nickel; and performing a series procedures to complete integrated circuit fabrication. This nickel salicide process increases the annealing temperature range for which a continuous, thin nickel mono-silicide layer can be formed on silicon by salicidation. It also delays the onset of agglomeration of nickel mono-silicide thin-films to a higher annealing temperature. Moreover, this nickel salicide process delays the transformation from nickel mono-silicide to higher resistivity nickel di-silicide, to higher annealing temperature.