Patents by Inventor Porponth Sichanugrist
Porponth Sichanugrist has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7838442Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.Type: GrantFiled: October 8, 2008Date of Patent: November 23, 2010Assignee: National Science and Technology Development AgencyInventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
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Patent number: 7671271Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.Type: GrantFiled: July 5, 2006Date of Patent: March 2, 2010Assignee: National Science and Technology Dev. AgencyInventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
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Publication number: 20090117685Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.Type: ApplicationFiled: October 8, 2008Publication date: May 7, 2009Applicant: NATIONAL SCIENCE AND TECHNOLOGY DEVELOPMENT AGENCYInventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
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Publication number: 20080011289Abstract: A solar cell and water heater plate assembly is disclosed which may be incorporated into a PVT collector.Type: ApplicationFiled: February 5, 2007Publication date: January 17, 2008Inventors: Porponth Sichanugrist, Thipjak Nualboonrueng, Sirimongkol Jaikla, Jiraphong Phongsitong
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Publication number: 20070209699Abstract: A method for producing a solar cell including the steps of forming a p-type microcrystalline silicon oxide layer on a glass substrate using a PECVD method and raw gases comprising Silane gas, Diborane gas, Hydrogen gas and Carbon Dioxide gas. The method may employ a frequency of between about 13.56-60 MHz. The PECVD method may be performed at a power density of between about 10-40 mW/cm2 and a pressure of between about 0.5-2 Torr, and with a ratio of Carbon Dioxide to Silane of between about 0.10-0.24; a ratio of Diborane to Silane of 0.10 or less, and a ratio of Silane to Hydrogen of 0.01 or less. A tandem solar cell structure may be formed by forming top and bottom layers by the method described above, and placing the top layer over the bottom layer.Type: ApplicationFiled: July 5, 2006Publication date: September 13, 2007Inventors: Porponth Sichanugrist, Nirut Pingate, Decha Yotsaksri
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Publication number: 20070137574Abstract: A solar cell manufacturing machine is configured to connect with a VHF frequency generator. The machine is used for coating an amorphous silicon film and a microcrystalline silicon film on a substrate vertically, and comprises a vacuum chamber, a box carrier positioned in the vacuum chamber, at least one hole shaped plate electrode vertically positioned in the box carrier, and a plurality of ground plates vertically positioned in the box carrier adjacent to the plate electrode. The plate electrode has defined thereon a plurality of holes formed to spread electromagnetic energy inputted into the plate electrode from the VHF frequency generator. The plate electrode and the plurality of ground plates are configured to form an electric field therebetween so as to coat at least one of an amorphous silicon film and a microcrystalline film on at least one substrate positioned between the plate electrode and the ground plates.Type: ApplicationFiled: December 21, 2006Publication date: June 21, 2007Inventors: Porponth Sichanugrist, Nirut Pingate, Jaran Sritharathikun, Peerawut Chinworarangsri, Patipan Krudtad, Somlak Khunraksa
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Patent number: 5507881Abstract: Solar cells are formed of (a) a transparent substrate; (b) a transparent electrode; (c) a first doped layer comprising amorphous silicon oxide, optionally including nitrogen, said first doped layer containing a dopant whereby the first doped layer is of a first conductivity type and has an optical gap of from 2.0 to 2.3 eV and a ratio of light conductivity to dark conductivity of 5 or less at 25.degree. C.; (d) a layer of intrinsic amorphous silicon; (e) a second doped layer comprising amorphous silicon, said second doped layer containing a dopant whereby the second doped layer is of a second conductivity type different from the first conductivity type; and (f) a second electrode. The first doped layer may be of either n-type or p-type conductivity. The first doped layer can be formed over the transparent electrode by decomposing a gas mixture comprising SiH.sub.4, an oxygen source gas selected from N.sub.2 O or CO.sub.2, and a dopant, in a hydrogen carrier at a substrate temperature of 150.degree. to 250.Type: GrantFiled: March 16, 1994Date of Patent: April 16, 1996Assignee: Fuji Electric Co., Ltd.Inventors: Porponth Sichanugrist, Shinji Fujikake, Hiromitsu Ota
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Patent number: 5391410Abstract: An amorphous silicon thin film is disclosed, which is produced by plasma CVD in which hydrogen-diluted SiH.sub.4 and N.sub.2 O are supplied during chemical vapor deposition as reacting source gases for the chemical vapor deposition, wherein the degree of hydrogen dilution is from 10 to 20.Type: GrantFiled: May 28, 1993Date of Patent: February 21, 1995Assignee: Showa Shell Sekiku K.K.Inventors: Tetsuro Nii, Porponth Sichanugrist, Takahisa Kase
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Patent number: 5366713Abstract: A method of forming p-type silicon carbide which comprises using reactive source gases comprising silane, hydrogen, trimethylboron, and either diborane or boron trifluoride, to thereby attain a widened band gap by the action of the carbon contained in the trimethylboron.Type: GrantFiled: May 28, 1993Date of Patent: November 22, 1994Assignee: Showa Shell Sekiyu K.K.Inventors: Porponth Sichanugrist, Tetsuro Nii, Takahisa Kase
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Patent number: 5336623Abstract: A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p Junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.Type: GrantFiled: March 2, 1993Date of Patent: August 9, 1994Assignee: Showa Shell Sekiyu K.K.Inventors: Porponth Sichanugrist, Tetsuro Nii
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Patent number: 5298087Abstract: A photovoltaic device that comprises an insulating transparent substrate coated with a light-receiving surface electrode formed of a thin metal film which in turn is overlaid with an amorphous semiconductor layer and a back electrode, said thin metal film being adapted for use as a mirror.Type: GrantFiled: November 20, 1992Date of Patent: March 29, 1994Assignee: Showa Shell Sekiyu K.K.Inventors: Porponth Sichanugrist, Norimitsu Tanaka
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Patent number: 5248345Abstract: An integrated photovoltaic device which comprises a plurality of amorphous silicon based solar cells each comprising on the light-receiving side of a common transparent substrate, a transparent electrode, a metal electrode on the transparent electrode, and an amorphous semiconductor layer interposed between the metal electrode and the transparent electrode, said plurality of solar cells being interconnected in a series or series-parallel fashion by means of said transparent electrode and said metal electrode, said metal electrode being formed of a metal film comprising, in superposition in order from the amorphous semiconductor layer side, layers of aluminum, an additive metal for aluminum bronze, and copper.Type: GrantFiled: October 16, 1991Date of Patent: September 28, 1993Assignee: Showa Shell Sekiyu K.K.Inventors: Porponth Sichanugrist, Norimitsu Tanaka
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Patent number: 5133809Abstract: A photovoltaic device and a process for manufacturing a photovoltaic device which includes providing a plurality of spaced transparent electrode layer regions on an insulating transparent substrate plate, forming an amorphous semiconductor layer over the spaced transparent electrode layer regions, forming a patterned conductive printed electrode layer over the amorphous semiconductor layer to form a plurality of photovoltaic regions, and then irradiating the photovoltaic regions with a laser beam from the substrate plate side to heat and melt the transparent electrode, amorphous semiconductor, and conductive printed electrode in each photovoltaic region, thereby forming in each photovoltaic region a conductive path made of an alloy formed by the melting, thus electrically connecting the photovoltaic regions in series.Type: GrantFiled: October 5, 1990Date of Patent: July 28, 1992Assignee: Showa Shell Sekiyu K.K.Inventors: Porponth Sichanugrist, Hirohisa Suzuki, Hirofumi Nishi
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Patent number: 4790883Abstract: A photovoltaic cell of the thin film silicon p-i-n class in which a microcrystalline silicon film is used in place of the p or n region of the p-i-n structure and is simultaneously used as the corresponding current collecting film.Type: GrantFiled: December 18, 1987Date of Patent: December 13, 1988Inventors: Porponth Sichanugrist, Karl E. Knapp