Patents by Inventor Porshia S. Wrschka

Porshia S. Wrschka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a collar using selective SiGe/Amorphous Si Etch
    Patent number: 6987042
    Abstract: A method of forming collar isolation for a trench storage memory cell structure is provided in which amorphous Si (a:Si) and silicon germanium (SiGe) are first formed into a trench structure. An etching process that is selective to a:Si as compared to SiGe is employed in defining the regions in which the collar isolation will be formed. The selective etching process employed in the present invention is a wet etch process that includes etching with HF, rinsing, etching with NH4OH, rinsing, and drying with a monohydric alcohol such as isopropanol. The sequence of NH4OH etching and rinsing may be repeated any number of times. The conditions used in the selective etching process of the present invention are capable of etching a:Si at a faster rate than SiGe.
    Type: Grant
    Filed: May 30, 2003
    Date of Patent: January 17, 2006
    Assignee: International Business Machines Corporation
    Inventors: Jochen Beintner, Naim Moumen, Porshia S. Wrschka
  • METHOD OF FORMING A COLLAR USING SELECTIVE SiGe/AMORPHOUS Si ETCH
    Publication number: 20040241939
    Abstract: A method of forming collar isolation for a trench storage memory cell structure is provided in which amorphous Si (a:Si) and silicon germanium (SiGe) are first formed into a trench structure. An etching process that is selective to a:Si as compared to SiGe is employed in defining the regions in which the collar isolation will be formed. The selective etching process employed in the present invention is a wet etch process that includes etching with HF, rinsing, etching with NH4OH, rinsing, and drying with a monohydric alcohol such as isopropanol. The sequence of NH4OH etching and rinsing may be repeated any number of times. The conditions used in the selective etching process of the present invention are capable of etching a:Si at a faster rate than SiGe.
    Type: Application
    Filed: May 30, 2003
    Publication date: December 2, 2004
    Applicants: International Business Machines Corporation, Infineon Technologies North America Corp.
    Inventors: Jochen Beintner, Naim Moumen, Porshia S. Wrschka
  • Method of area enhancement in capacitor plates
    Patent number: 6709947
    Abstract: A method and structure for increasing the area and capacitance of both trench and planar integrated circuit capacitors uses Si nodules deposited on a thin dielectric seeding layer that is absorbed during subsequent thermal processing, thereby avoiding a high resistance layer in the capacitor.
    Type: Grant
    Filed: December 6, 2002
    Date of Patent: March 23, 2004
    Assignees: International Business Machines Corporation, Infineon Technologies AG
    Inventors: Porshia S. Wrschka, Irene McStay