Patents by Inventor Prabhakara Gopaladasu
Prabhakara Gopaladasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230268192Abstract: A method for selectively etching at least one feature in a first region with respect to a second region of a stack is provided. The first region is selectively etched with respect to the second region to form at least one partial feature in the first region, the at least one partial feature having a depth with respect to a surface of the second region. An in-situ a fluorine-free, non-conformal, carbon-containing mask is deposited over the first region and the second region, wherein the carbon-containing mask is selectively deposited on the second region at a second thickness with respect to the first region at a first thickness, the second thickness being greater than the first thickness. The first region is further etched in-situ to etch the at least one partial feature and wherein the carbon-containing mask acts as an etch mask for the second region.Type: ApplicationFiled: June 13, 2022Publication date: August 24, 2023Inventors: Eric HUDSON, Kapu Sirish REDDY, Ragesh PUTHENKOVILAKAM, Shashank DESHMUKH, Prabhat KUMAR, Prabhakara GOPALADASU, Seokmin YUN, Xin ZHANG
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Patent number: 10541141Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.Type: GrantFiled: July 25, 2018Date of Patent: January 21, 2020Assignee: Lam Research CorporationInventors: Adarsh Basavalingappa, Peng Wang, Bhaskar Nagabhirava, Michael Goss, Prabhakara Gopaladasu, Randolph Knarr, Stefan Schmitz, Phil Friddle
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Patent number: 10361091Abstract: A method for etching features into a porous low-k dielectric etch layer is provided. A plurality of cycles is performed in a plasma processing chamber. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon and/or hydrofluorocarbon gas, creating a plasma in the plasma processing chamber using the deposition gas, depositing a fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising a noble gas and a carbon etching additive, creating a plasma in the plasma processing chamber using the activation gas, providing an activation bias in the plasma processing chamber, wherein the activation bias causes the etching of the low-k dielectric layer, with consumption of the fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the activation gas.Type: GrantFiled: May 31, 2017Date of Patent: July 23, 2019Assignee: Lam Research CorporationInventors: Eric Hudson, Shashank Deshmukh, Sonny Li, Chia-Chun Wang, Prabhakara Gopaladasu, Zihao Ouyang
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Publication number: 20180350618Abstract: A method for etching features into a porous low-k dielectric etch layer is provided. A plurality of cycles is performed in a plasma processing chamber. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon and/or hydrofluorocarbon gas, creating a plasma in the plasma processing chamber using the deposition gas, depositing a fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising a noble gas and a carbon etching additive, creating a plasma in the plasma processing chamber using the activation gas, providing an activation bias in the plasma processing chamber, wherein the activation bias causes the etching of the low-k dielectric layer, with consumption of the fluorocarbon or hydrofluorocarbon containing layer, and stopping the flow of the activation gas.Type: ApplicationFiled: May 31, 2017Publication date: December 6, 2018Inventors: Eric HUDSON, Shashank DESHMUKH, Sonny LI, Chia-Chun WANG, Prabhakara GOPALADASU, Zihao OUYANG
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Publication number: 20180330959Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.Type: ApplicationFiled: July 25, 2018Publication date: November 15, 2018Inventors: Adarsh BASAVALINGAPPA, Peng WANG, Bhaskar NAGABHIRAVA, Michael GOSS, Prabhakara GOPALADASU, Randolph KNARR, Stefan SCHMITZ, Phil FRIDDLE
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Patent number: 10037890Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.Type: GrantFiled: October 11, 2016Date of Patent: July 31, 2018Assignee: Lam Research CorporationInventors: Adarsh Basavalingappa, Peng Wang, Bhaskar Nagabhirava, Michael Goss, Prabhakara Gopaladasu, Randolph Knarr, Stefan Schmitz, Phil Friddle
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Patent number: 10002773Abstract: A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.Type: GrantFiled: October 11, 2016Date of Patent: June 19, 2018Assignee: Lam Research CorporationInventors: Bhaskar Nagabhirava, Adarsh Basavalingappa, Peng Wang, Prabhakara Gopaladasu, Michael Goss
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Publication number: 20180102257Abstract: A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.Type: ApplicationFiled: October 11, 2016Publication date: April 12, 2018Inventors: Bhaskar NAGABHIRAVA, Adarsh BASAVALINGAPPA, Peng WANG, Prabhakara GOPALADASU, Michael Goss
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Publication number: 20180102253Abstract: A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio, providing a RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase. The etch phase, comprises providing a flow of an etch phase gas, comprising a fluorocarbon or hydrofluorocarbon containing gas and an oxygen containing gas with a fluorocarbon or hydrofluorocarbon to oxygen ratio that is lower than the fluorocarbon or hydrofluorocarbon to oxygen ratio of the deposition phase gas, providing a RF power, and stopping the etch phase.Type: ApplicationFiled: October 11, 2016Publication date: April 12, 2018Inventors: Adarsh BASAVALINGAPPA, Peng WANG, Bhaskar NAGABHIRAVA, Michael GOSS, Prabhakara GOPALADASU, Randolph KNARR, Stefan SCHMITZ, Phil FRIDDLE
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Patent number: 8912633Abstract: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.Type: GrantFiled: September 7, 2012Date of Patent: December 16, 2014Assignee: Lam Research CorporationInventors: Sangjun Cho, Tom Choi, Taejoon Han, Sean Kang, Prabhakara Gopaladasu, Bi-Ming Yen
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Publication number: 20130001754Abstract: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.Type: ApplicationFiled: September 7, 2012Publication date: January 3, 2013Applicant: LAM RESEARCH CORPORATIONInventors: Sangjun Cho, Tom Choi, Taejoon Han, Sean Kang, Prabhakara Gopaladasu, Bi-Ming Yen
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Patent number: 8283255Abstract: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.Type: GrantFiled: May 24, 2007Date of Patent: October 9, 2012Assignee: Lam Research CorporationInventors: Sangjun Cho, Tom Choi, Taejoon Han, Sean Kang, Prabhakara Gopaladasu, Bi-Ming Yen
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Publication number: 20080293249Abstract: A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.Type: ApplicationFiled: May 24, 2007Publication date: November 27, 2008Inventors: Sangjun Cho, Tom Choi, Taejoon Han, Sean Kang, Prabhakara Gopaladasu, Bi-Ming Yen
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Publication number: 20080064214Abstract: In the fabrication of an integrated circuit where a porous silicon oxide layer is formed over a surface of a semiconductor substrate to electrically isolate two conductive metal layers, a via through the porous silicon oxide layer has an opening etched through the porous silicon oxide layer, a self-assembled monolayer adhering to an etched surface of the opening and to exposed pores, and a conductive material filling the opening.Type: ApplicationFiled: September 13, 2006Publication date: March 13, 2008Applicant: LAM RESEARCH CORPORATIONInventors: Taejoon Han, Sang-Jun Cho, Sung-Jin Cho, Tom Choi, Prabhakara Gopaladasu, Sean Kang