Abstract: Generally, this disclosure provides systems, devices and methods for extending charge cycle life of rechargeable batteries through the use of constrained anode fibers. A battery may include a porous anode fiber configured to produce electrons during discharge of the battery. The battery may also include and an anode current collector layer, configured to provide a conductive path to a first terminal of the battery, wherein the anode current collector layer is concentrically disposed on the anode fiber to constrain expansion of the anode fiber during charging of the battery. The porosity of the anode fiber allows for the constrained expansion to be directed radially inward, decreasing the volume of the porous regions of the anode fiber.

Abstract: A system and method for an energy storage device, such as a battery, having an electrode tab, an electrode, and a laser weld coupling the electrode tab to the electrode. The electronic storage device or battery may be installed in an electronic device. Fabrication of the energy storage device may involve placing an electrode tab adjacent a surface of a thin layer of the electrode, and laser welding the electrode tab to the thin layer.

Abstract: A system and method for an energy storage device, such as a battery, having an electrode tab, an electrode, and a laser weld coupling the electrode tab to the electrode. The electronic storage device or battery may be installed in an electronic device. Fabrication of the energy storage device may involve placing an electrode tab adjacent a surface of a thin layer of the electrode, and laser welding the electrode tab to the thin layer.

Abstract: Described is an apparatus comprising: a randomly shaped cathode; an anode current collector positioned in the randomly shaped cathode; and an outer conductor coupling the randomly shaped cathode, the outer conductor wrapping the randomly shaped cathode. A method is provided which comprises: forming a flat or tubular core to operate as an anode current collector; forming a randomly shaped cathode over the flat or tubular core; and applying an outer conductive skin over the randomly shaped cathode. Described is a system which comprises a memory; a processor coupled to the memory; and a battery to provide power to the memory and the processor, the battery according to the apparatus described above.

Abstract: Generally, this disclosure provides systems, devices and methods for extending charge cycle life of rechargeable batteries through the use of constrained anode fibers. A battery may include a porous anode fiber configured to produce electrons during discharge of the battery. The battery may also include and an anode current collector layer, configured to provide a conductive path to a first terminal of the battery, wherein the anode current collector layer is concentrically disposed on the anode fiber to constrain expansion of the anode fiber during charging of the battery. The porosity of the anode fiber allows for the constrained expansion to be directed radially inward, decreasing the volume of the porous regions of the anode fiber.

Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.

Abstract: A process for forming a conductive contact having a flat interface. A layer containing niobium and titanium is deposited on a silicon substrate and the resulting structure is annealed in a nitrogen-containing atmosphere at about 500° C. to about 700° C. By this process, a flatter interface between silicide and silicon, which is less likely to cause junction leakage, is formed on annealing. The step of annealing also produces a more uniform bilayer, which is a better barrier against tungsten encroachment during subsequent tungsten deposition. Larger silicide grains are also formed so that fewer grain boundaries are produced, reducing metal diffusion in grain boundaries. The process can be used to form contacts for very small devices and shallow junctions, such as are required for current and future semiconductor devices.

Abstract: A method of forming a semiconductor device having aluminum lines therein, wherein the occurrence of lateral extrusions and voids are reduced. The method comprises the formation of a metal stack on a surface of the substrate, wherein the aluminum layer of the metal stack is deposited under controlled conditions; etching the metal lines in the metal stack; and exposing the substrate to a subsequent anneal.

Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.

Abstract: A method and apparatus are provided for forming a silicide on a semiconductor substrate by integrating under a constant vacuum the processes of removing an oxide from a surface of a semiconductor substrate and depositing a metal on the cleaned surface without exposing the cleaned surface to air. The method and apparatus of the present invention eliminates the exposure of the cleaned substrate to air between the oxide removal and metal deposition steps. This in-situ cleaning of the silicon substrate prior to cobalt deposition provides a cleaner silicon substrate surface, resulting in enhanced formation of cobalt silicide when the cobalt layer is annealed.

Abstract: A process for forming a conductive contact having a flat interface. A layer containing niobium and titanium is deposited on a silicon substrate and the resulting structure is annealed in a nitrogen-containing atmosphere at about 500° C. to about 700° C. By this process, a flatter interface between silicide and silicon, which is less likely to cause junction leakage, is formed on annealing. The step of annealing also produces a more uniform bilayer, which is a better barrier against tungsten encroachment during subsequent tungsten deposition. Larger silicide grains are also formed so that fewer grain boundaries are produced, reducing metal diffusion in grain boundaries. The process can be used to form contacts for very small devices and shallow junctions, such as are required for current and future semiconductor devices.

Abstract: A method and apparatus are provided for forming cobalt on a silicon substrate containing native silicon oxide on the surface thereof wherein a modified vapor sputtering device is used. The vapor sputtering device is modified by providing an electrical circuit to ground whereby the wafer disposed in the device is electrically connected to the ground circuit. The ground circuit preferably contains a resistor therein to control wafer voltage and current flow from the wafer to ground. It has been found that providing a current flow from the wafer to ground and particularly in a ground circuit containing a resistor, provides an in-situ simultaneous cleaning of native oxide on the silicon surface and deposition of cobalt on cleaned silicon. The deposited cobalt containing substrate may then be readily annealed to form cobalt silicide evenly and uniformly across the desired regions of the wafer surface.

Abstract: A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.