Abstract: A coherent beam coupled laser diode array includes an array of laser diodes. Each diode emits a beam propagating along a beam path. An array of collimation optics is included. Each of the collimation optics collimates one beam. A first lenslet array is included. Each lenslet refracts a portion of one beam and a portion of a different beam from the array. A partially reflecting mirror is included. A first portion of each beam propagates through the partially reflecting mirror and a second portion of each beam is reflected back toward the first lenslet array. The second portion of each beam reflected propagates back through the first lenslet array and the collimation optics and into one of the diodes in the array of laser diodes, thereby creating an optical cross coupling. A second lenslet array collimates each beam propagating through each lenslet to form a single laser beam.

Abstract: A semiconductor laser and a method of forming the same are provided. The n-side and p-side junctions are independently optimized to improve carrier flow. The material for the n-side cladding layer is selected to yield a small conduction to valance band gap offset ratio while the material for the p-side cladding layer is selected to yield a large conduction to valance band gap offset ratio.

Abstract: A semiconductor laser and a method of forming the same are provided. The semiconductor laser includes cladding layers comprised of hybrid materials systems which have different conduction to valance band gap offset ratios with respect to GaAs. As a result of these hybrid structures, lower junction voltages on both the n-side and p-side of the laser structure are achieved, thereby increasing the electrical to optical conversion efficiency of the laser.