Abstract: An initial pulse current cycle is supplied to at least one through-hole via. The pulse current cycle includes a forward pulse current. The magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current. A corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of the via. At least one subsequent pulse current cycle is supplied. The magnitudes of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio. A subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of the via.

Abstract: A method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate, said through-hole via having an effective aspect ratio, said method including supplying an initial pulse current cycle to the via, said pulse current cycle including a forward pulse current, and a reverse pulse current, wherein the forward pulse current and the reverse pulse current are each of a predetermined distinct magnitude and are each supplied over a predetermined distinct period, wherein the magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current, such that a corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of said via; and supplying at least one subsequent pulse current cycle wherein the magnitude of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced