Abstract: A memory device comprises: a stack of alternating silicon oxide layers and wordline layers; each of the wordline layers comprising dipole regions adjacent to the silicon oxide layers, the dipole regions comprising a nitride, a carbide, an oxide, a carbonitride, or combinations thereof of a dipole metal. The dipole regions are formed by driving a dipole film into a gate oxide layer of the wordline layers, and any residual dipole film is removed.

Abstract: A method of predicting virtual metrology data for a wafer lot that includes receiving first image data from an imager system, the first image data relating to at least one first wafer lot, receiving measured metrology data from metrology equipment relating to the at least one first wafer lot, applying one or more machine learning techniques to the first image data and the measured metrology data to generate at least one predictive model for predicting at least one of virtual metrology data or virtual cell metrics data of wafer lots, and utilizing the at least one generated predictive model to generate at least one of first virtual metrology data or first virtual cell metrics data for the first wafer lot.

Abstract: A user experience repository may contain base layouts and variant metadata for applications of an enterprise. An application design platform may receive, from a designer, an indication of a selected base layout for a selected application and interact with the designer to create a user experience variant (e.g., a page layout). The designer may then define an assignment rule for the user experience variant, the assignment rule including custom logic and multiple user parameters (e.g., a user role, country, language, etc.), and the system may store information about the user experience variant and assignment rule. An enterprise application service platform may determine that a user is accessing the selected application and evaluate the custom logic of the assignment rule based on user parameters of the user accessing the selected application. In accordance with the evaluation, the system may arrange to provide the appropriate user experience variant to the user.

Abstract: A first packet of a packet flow is received at a classifying network device. The first packet is forwarded from the classifying network device to a firewall network device. An indication that the packet flow is to be offloaded is received at the classifying network device. Data is stored at the classifying network device indicating that the packet flow is to be offloaded. A non-control packet of the packet flow is received at the classifying network device. A determination is made that the non-control packet belongs to the packet flow by comparing data contained in the non-control packet to the stored data. The non-control packet of the packet flow is directed to a processing entity in response to the determining. A control packet of the packet flow is received at the classifying network device. The control packet of the packet flow is directed to the firewall network device.

Abstract: Embodiments of the disclosure relate to techniques and apparatus for reducing out-of-plane distortion (OPD) in a substrate, as well as control of the effects of OPD and the effects that the modifications made to the substrate to correct for the OPD have on subsequent substrate processing operations performed on the substrate. The present embodiments employ novel techniques to reduce the OPD in a substrate without adding or modifying portions of the substrate that will create issues in subsequent substrate fabrication processes.

Abstract: Embodiments of the disclosure relate to techniques and apparatus for reducing out-of-plane distortion (OPD) in a substrate, as well as control of the effects of OPD and the effects that the modifications made to the substrate to correct for the OPD have on subsequent substrate processing operations performed on the substrate. The present embodiments employ novel techniques to reduce the OPD in a substrate without adding or modifying portions of the substrate that will create issues in subsequent substrate fabrication processes.

Abstract: Novel crystalline forms of 3-(imidazo[1,2-b]pyridazin-3-ylethynyl)-4-methyl-N-{4-[(4-methylpiperazin-1-yl)methyl]-3-(trifluoromethyl)phenyl}benzamide free base and 3-(imidazo[1,2-b]pyridazin-3-ylethynyl)-4-methyl-N-{4-[(4-methylpiperazin-1-yl)methyl]-3-(trifluoromethyl)phenyl}benzamide mono hydrochloride, pharmaceutical compositions thereof and methods of their preparation and use are disclosed herein.

Abstract: This invention relates to a pharmaceutical composition comprising 5-chloro-N4-[2-(dimethylphosphoryl)phenyl]-N2-{2-methoxy-4-[4-(4-methylpiperazin-1-yl)piperidin-1-yl]phenyl}pyrimidine-2,4-diamine as the active pharmaceutical ingredient, and therapeutic uses of the pharmaceutical formulation. In particular, the invention is directed to tablets comprising the pharmaceutical composition, methods of preparing the tablets, and therapeutic uses thereof.

Abstract: Embodiments of the disclosure include an apparatus and method of forming an improved memory device. In some embodiments, the apparatus generally includes, for example, a plurality of alternating layers formed over a surface of a substrate including a plurality of word line layers with gate regions and a plurality of inter-word line dielectric layers; a channel; and an ONO layer stack disposed between the gate regions and the channel. The embodiments of the present disclosure may include at least one of: word line layers with gate regions that have sidewalls that have a reverse dome shape, sacrificial layers disposed between the word line layers and the inter-word line dielectric layers, or top and bottom dielectric layers deposited on top and bottom portions of the word line layers. Embodiments of the disclosure described herein may allow for the electric field of the gate regions of a memory device to be modified.

Abstract: A three-dimensional (3D) NAND memory structure may include alternating layers of materials arranged in a vertical stack on a silicon substrate, such as alternating oxide and nitride layers. The alternating nitride layers may later be removed, and the recesses may be filled with a conductive material to form word lines for the memory array. To avoid pinching off these recesses with silicon byproducts from a traditional wet etch, a dry etch may be instead be used to remove the nitrite layers. To protect the silicon substrate, a first insulating layer may be deposited at the bottom of the slit to cover the exposed silicon substrate before performing the dry etch. After applying a second insulating layer to cover the alternating oxide/nitride layers, a directional etch may punch through both insulating layers to again expose the silicon substrate before applying a solid material fill in the slit.

Abstract: A three-dimensional (3D) NAND memory structure may include material layers arranged in a vertical stack including alternating horizontal insulating layers and wordline layers. The material layers may be etched to form a landing pad. A vertical wordline may extend through one or more of the horizontal wordline layers beneath the landing pad. The vertical wordline may be conductively connected to a top horizontal wordline, and the vertical wordline may be insulated from any of the horizontal wordlines that the vertical wordline extends through beneath the top horizontal wordline. A liner may also be formed over a top horizontal wordline at the landing pad.

Abstract: In one aspect, a method of IP obfuscation of a user device includes receiving, over an Extendible Authentication Protocol (EAP) session between a user device and a network access point, location preferences of the user device, generating, based on the location preferences or a network policy, a geohash for the user device, identifying, for the user device, an IP anchor, sending, over the EAP session, the geohash to the user device, and receiving, from the user device, network traffic, wherein the network access point utilizes the geohash and the IP anchor to route the network traffic for the user device and obfuscate IP address of the user device from third-party access.

Abstract: Disclosed embodiments include determining whether the insurance claim comprises an anomaly based on whether the claim violates a rule in a Rules Engine or is scored by an Artificial Intelligence/Machine Learning engine below a threshold. When the claim comprises an anomaly, (i) for each feature of the claim, (a) determining a sensitivity value of the feature relative to each other feature of the claim, and (b) determining a saliency value of the feature relative categories relevant to the claim, and (ii) estimating a value of the claim based on a multi-variate linear regression model. And based on the sensitivity values, saliency values, and estimated value, recommending one or more ways to cure the anomaly based on (i) a Local Interpretable Model-Agnostic Explanations based recommendation and/or (ii) a Global Surrogate Model based recommendation.

Abstract: A three-dimensional NAND flash memory structure may include solid channel cores of epitaxial silicon that are grown directly from a silicon substrate reference. The alternating oxide-nitride material layers may be formed as a stack, and a channel hole may be etched through the material layers that extends down to the silicon substrate. A tunneling layer may be formed around the channel hole to contact the alternating material layers, and an epitaxial silicon core may be grown from the silicon substrate up through the channel holes. In some implementations, support structures may be formed in channel holes or in slits of the memory array to provide physical support while the epitaxial silicon cores are grown through the channels.

Abstract: A three-dimensional NAND flash memory structure may include solid channel cores of epitaxial silicon that are grown directly from a silicon substrate reference. The alternating oxide-nitride material layers may be formed as a stack, and a channel hole may be etched through the material layers that extends down to the silicon substrate. A tunneling layer may be formed around the channel hole to contact the alternating material layers, and an epitaxial silicon core may be grown from the silicon substrate up through the channel holes. In some implementations, support structures may be formed in channel holes or in slits of the memory array to provide physical support while the epitaxial silicon cores are grown through the channels.

Abstract: Aspects of the subject disclosure may include, for example, obtaining input data, processing the input data to generate output data, the output data including an identification of one or more characteristics associated with tethered communications involving at least a first user equipment, and based on the identification of the one or more characteristics, causing an action to be taken. Other embodiments are disclosed.

Abstract: The present application is directed to a therapeutically useful monomer comprising a linker element and an E3 ubiquitin ligase binding moiety. The linker and the E3 ubiquitin ligase binding moiety are covalently coupled to each other either directly or through an optional connector moiety.

Abstract: Systems and methods for generating a dataset of synthesized data items from a dataset of original data items are disclosed herein. Some embodiments include (i) selecting an original data item from the dataset of original data items, where each original data item (a) comprises a combination of first-type codes and second-type codes, and (b) is associated with a topic in a topic model; and (ii) generating a synthesized data item based on the original data item and the topic associated with the original data item, where the synthesized data item comprises a combination of first-type codes and second-type codes that differs from the combination of first-type codes and second-type codes in the original data item by one first-type code or one second-type code.

Abstract: The compounds of the present invention are represented by the following compounds having Formula (I): where the substituents R, R1-R5, k, m, n, and q are as defined herein. These compounds are used in the treatment of cancer, immunologic disorders, autoimmune disorders, neurodegenerative disorders, or inflammatory disorders, infectious disease, or for providing immunosuppression for transplanted organs or tissues.

Abstract: Embodiments for automatically converting printed documents into electronic format using artificial intelligence techniques disclosed herein include: (i) receiving a plurality of images of documents; (ii) for each received image, using an image classification algorithm to classify the image as one of (a) an image of a first type of document, or (b) an image of a second type of document; (iii) for each image classified as an image of the first type of document, using an object localization algorithm to identity an area of interest in the image; (iv) for an identified area of interest, using an optical character recognition algorithm to extract text from the identified area of interest; and (v) populating a record associated with the document with the extracted text.