Patents by Inventor Pradeep Ramani

Pradeep Ramani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SENSING RESISTANCE VARIABLE MEMORY
    Publication number: 20100296331
    Abstract: The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.
    Type: Application
    Filed: July 30, 2010
    Publication date: November 25, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Pradeep Ramani, John D. Porter
  • Sensing resistance variable memory
    Patent number: 7787282
    Abstract: The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: August 31, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Pradeep Ramani, John D. Porter
  • PHASE CHANGE MEMORY
    Publication number: 20100202195
    Abstract: The present disclosure includes devices and methods for operating resistance variable memory cells. One or more embodiments include applying a programming signal to a resistance variable material of a memory cell, and decreasing a magnitude of a trailing portion of the applied programming signal successively according to a number of particular decrements. The magnitude and the duration of the number of particular decrements correspond to particular programmed values.
    Type: Application
    Filed: April 20, 2010
    Publication date: August 12, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Pradeep Ramani, John D. Porter
  • Phase change memory
    Patent number: 7729163
    Abstract: The present disclosure includes devices and methods for operating phase change memory cells. One or more embodiments include applying a programming signal to a phase change material of a memory cell, and decreasing a magnitude of a trailing portion of the applied programming signal successively according to a number of particular decrements. The magnitude and the duration of the number of particular decrements correspond to particular programmed values.
    Type: Grant
    Filed: March 26, 2008
    Date of Patent: June 1, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Pradeep Ramani, John David Porter
  • PHASE CHANGE MEMORY
    Publication number: 20090244961
    Abstract: The present disclosure includes devices and methods for operating phase change memory cells. One or more embodiments include applying a programming signal to a phase change material of a memory cell, and decreasing a magnitude of a trailing portion of the applied programming signal successively according to a number of particular decrements. The magnitude and the duration of the number of particular decrements correspond to particular programmed values.
    Type: Application
    Filed: March 26, 2008
    Publication date: October 1, 2009
    Applicant: Micron Technology, Incorporated
    Inventors: Pradeep Ramani, John D. Porter
  • SENSING RESISTANCE VARIABLE MEMORY
    Publication number: 20090237977
    Abstract: The present disclosure includes devices and methods for operating resistance variable memory. One device embodiment includes an array of memory cells wherein a number of the cells are commonly coupled to a select line, the number cells including a number of data cells programmable within a number of target threshold resistance (Rt) ranges which correspond to a number of data states, and a number of reference cells interleaved with the data cells and programmable within the number of target Rt ranges. The aforementioned device embodiment also includes control circuitry coupled to the array and configured to sense a level associated with at least one data cell and at least one reference cell, and compare the sensed level associated with the at least one data cell with the sensed level associated with the at least one reference cell to determine a data state of the at least one data cell.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 24, 2009
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Pradeep Ramani, John D. Porter