Abstract: Keepalive packets are transmitted between a sender node and a receiver node at an interval that varies depending on the transit times of previously transmitted keepalive packets. The transit time is based on when a keepalive packet is transmitted to the receiver node and when a corresponding feedback packet is received from the receiver node. The transmission interval varies depending on the path conditions between the sender node and the receiver node, which may be reflected in the transit time.

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

Abstract: Keepalive packets are transmitted between a sender node and a receiver node at an interval that varies depending on the transit times of previously transmitted keepalive packets. The transit time is based on when a keepalive packet is transmitted to the receiver node and when a corresponding feedback packet is received from the receiver node. The transmission interval varies depending on the path conditions between the sender node and the receiver node, which may be reflected in the transit time.

Abstract: Aspects of the present disclosure relate to methods, systems, and apparatus for conducting a radical treatment operation on a substrate prior to conducting an annealing operation on the substrate. In one implementation, a method of processing semiconductor substrates includes pre-heating a substrate, and exposing the substrate to species radicals. The exposing of the substrate to the species radicals includes a treatment temperature that is less than 300 degrees Celsius, a treatment pressure that is less than 1.0 Torr, and a treatment time that is within a range of 8.0 minutes to 12.0 minutes. The method includes annealing the substrate after the exposing of the substrate to the species radicals. The annealing includes exposing the substrate to molecules, an anneal temperature that is 300 degrees Celsius or greater, an anneal pressure that is within a range of 500 Torr to 550 Torr, and an anneal time that is less than 4.0 minutes.

Abstract: Enhanced oxidation with hydrogen radical pretreatment is described. In an example, a method of oxidizing a substrate includes positioning a substrate in a processing volume of a processing chamber, generating hydrogen radicals using a remote plasma source fluidly coupled to the processing chamber, exposing a surface of the substrate to the generated hydrogen radicals, and, subsequent to exposing the substrate to the generated hydrogen radicals, oxidizing the surface of the substrate to form an oxide layer on the surface of the substrate.