Patents by Inventor Prakash Talawar

Prakash Talawar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8510500
    Abstract: A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: August 13, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Soo Moon, Chan-Ik Park, Prakash Talawar
  • Patent number: 8214582
    Abstract: Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics. The non-volatile memory system includes a non-volatile memory cell array having a plurality of multi-level cells forming a MLC area and a plurality of single-level cells forming a SLC area, and an interface unit analyzing a characteristic of the write data and generating a corresponding data characteristic signal. A flash transition layer receives the data characteristic signal, and determines whether the write data should be stored in the MLC area or the SLC area based on whether or not the write data will be accessed by the file, or whether the address associated with the write data is frequently updated or not.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: July 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yang-sup Lee, Prakash Talawar, Chan-ik Park
  • Publication number: 20110055464
    Abstract: A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
    Type: Application
    Filed: November 1, 2010
    Publication date: March 3, 2011
    Inventors: Min-Soo Moon, Chan-Ik Park, Prakash Talawar
  • Patent number: 7844772
    Abstract: A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
    Type: Grant
    Filed: November 29, 2006
    Date of Patent: November 30, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Soo Moon, Chan-Ik Park, Prakash Talawar
  • Publication number: 20100153632
    Abstract: Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics. The non-volatile memory system includes a non-volatile memory cell array having a plurality of multi-level cells forming a MLC area and a plurality of single-level cells forming a SLC area, and an interface unit analyzing a characteristic of the write data and generating a corresponding data characteristic signal. A flash transition layer receives the data characteristic signal, and determines whether the write data should be stored in the MLC area or the SLC area based on whether or not the write data will be accessed by the file, or whether the address associated with the write data is frequently updated or not.
    Type: Application
    Filed: February 24, 2010
    Publication date: June 17, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yang-sup LEE, Prakash TALAWAR, Chan-ik PARK
  • Patent number: 7676626
    Abstract: Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics. The non-volatile memory system includes a non-volatile memory cell array having a plurality of multi-level cells forming a MLC area and a plurality of single-level cells forming a SLC area, and an interface unit analyzing a characteristic of the write data and generating a corresponding data characteristic signal. A flash transition layer receives the data characteristic signal, and determines whether the write data should be stored in the MLC area or the SLC area based on whether or not the write data will be accessed by the file, or whether the address associated with the write data is frequently updated or not.
    Type: Grant
    Filed: December 18, 2006
    Date of Patent: March 9, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yang-sup Lee, Prakash Talawar, Chan-ik Park
  • Publication number: 20080126680
    Abstract: Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics.
    Type: Application
    Filed: December 18, 2006
    Publication date: May 29, 2008
    Inventors: Yang-sup Lee, Prakash Talawar, Chan-ik Park
  • Publication number: 20080082729
    Abstract: A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.
    Type: Application
    Filed: November 29, 2006
    Publication date: April 3, 2008
    Inventors: Min-Soo Moon, Chan-Ik Park, Prakash Talawar