Abstract: A membrane for separating organic solvents such as methanol and toluene is provided. A plurality methacrylate polymer brushes, e.g., composed of hydroxyethyl methacrylate (HEMA) monomers or aminoethyl methacrylate (AEMA) monomers, are grafted from a crosslinked polyimide support using Single Electron Transfer-Living Radical Polymerization (SET-LRP). The polymer brushes themselves are also crosslinked by ethylene glycol dimethacrylate (EGDMA), triethylene glycol dimethacryalte (TEGDMA) trimesic acid, and/or itaconic acid. These hydrophilic polymeric brush membranes demonstrate pore stiffening and yet also opening, obtaining high selectivity at reasonable permeability and reduced energy requirements for commercially relevant separations, e.g., methanol/toluene. The addition of the crosslinker prevents loss of selectivity as a result of imparting increased rigidity, enabling the membranes to be operated at higher operating pressures for increased throughput.

Abstract: Semiconductor devices and methods for manufacturing the same are provided. The method includes epitaxially growing a doped crystalline silicon-containing layer over a source/drain feature and growing a doped amorphous silicon-containing layer over a field region of a semiconductor layer. The trench is formed in the semiconductor layer and the trench exposes the source/drain feature. The method further includes epitaxially growing an undoped crystalline silicon-containing capping layer over the doped crystalline silicon-containing layer and growing an undoped amorphous silicon-containing layer over the doped silicon-containing amorphous layer. The method further includes selectively removing the doped amorphous silicon-containing layer and the undoped amorphous silicon-containing layer relative to the silicon-containing crystalline capping layer. The method further includes removing the silicon-containing crystalline capping layer to expose the doped silicon-containing crystalline layer.

Abstract: Methods for forming a semiconductor structure and semiconductor structures are described. The method comprises patterning a substrate to form a first opening and a second opening, the substrate comprising an n transistor and a p transistor, the first opening over the n transistor and the second opening over the p transistor. The substrate is pre-cleaned. A molybdenum silicide (MoSi) layer is deposited on one or more of the p transistor and the n transistor. A titanium silicide (TiSi) layer is formed on the n transistor and the p transistor. A capping layer may be formed on the titanium silicide (TiSi) layer. The method may be an integrated method performed in a processing chamber without breaking vacuum.