Abstract: A powder coating apparatus reactor includes a loading port for a powder material, an inlet for one or more coating precursors, and a reaction chamber having an inner surface and a plurality of axial baffles. Each axial baffle extends inwardly from the inner surface of the reaction chamber of the rotary vessel. The plurality of axial baffles is configured to keep the powder material flowing within the reaction chamber during rotation of the rotary vessel to facilitate contact between the powder material and the one or more coating precursors. The powder coating apparatus further includes a rotary vacuum seal located at the loading port. The powder coating apparatus also includes a motor capable of actuating the rotary vessel about a center axis for rotation during reaction of the powder material with the coating precursors in the reaction chamber. Methods for coating powder materials with such a reactor are also provided.

Abstract: A powder coating apparatus reactor includes a loading port for a powder material, an inlet for one or more coating precursors, and a reaction chamber having an inner surface and a plurality of axial baffles. Each axial baffle extends inwardly from the inner surface of the reaction chamber of the rotary vessel. The plurality of axial baffles is configured to keep the powder material flowing within the reaction chamber during rotation of the rotary vessel to facilitate contact between the powder material and the one or more coating precursors. The powder coating apparatus further includes a rotary vacuum seal located at the loading port. The powder coating apparatus also includes a motor capable of actuating the rotary vessel about a center axis for rotation during reaction of the powder material with the coating precursors in the reaction chamber. Methods for coating powder materials with such a reactor are also provided.

Abstract: An apparatus and method for large area high speed atomic layer chemical vapor processing wherein continuous and alternating streams of reactive and inert gases are directed towards a co-axially mounted rotating cylindrical susceptor from a plurality of composite nozzles placed around the perimeter of the processing chamber. A flexible substrate is mounted on the cylindrical susceptor. In one embodiment, the process reactor has four composite injectors arranged substantially parallel to the axis of rotation of the cylindrical susceptor. In the other embodiment, the susceptor cross section is a polygon with a plurality of substrates mounted on its facets. The reactor can be operated to process multiple flexible or flat substrates with a single atomic layer precision as well as high-speed chemical vapor processing mode. The atomic layer chemical vapor processing system of the invention also has provisions to capture unused portion of injected reactive chemical precursors downstream.

Abstract: An ALD system includes an ALD reactor and a precursor trap coupled downstream of the ALD reactor via a valve assembly. The precursor trap is configured to collect unused chemical precursors after reactions in the ALD reactor.