Abstract: The invention is notably directed to a method of processing data in-memory. The method applies electrical signals to at least two input lines, which correspond to at least two rows. These two rows include at least one of the K rows and at least one of the L rows. This causes to obtain output signals in output of the M output lines, wherein the output signals depend on target values and operand values, in accordance with data stored across said at least two rows. Finally, the output signals are read out and a transformation operation is concurrently performed, in-memory, on the target values based on the operand values. This way transformed data are obtained by way of in-memory processing. The transformation may for instance be a cryptographic operation; the operand data may encode a cryptographic key. The invention is further directed to related apparatuses and systems, notably cryptographic service systems.

Abstract: A memory device enabling a reduced minimal conductance state may be provided. The device comprises a first electrode, a second electrode and phase-change material between the first electrode and the second electrode, wherein the phase-change material enables a plurality of conductivity states depending on the ratio between a crystalline and an amorphous phase of the phase-change material. The memory device comprises additionally a projection layer portion in a region between the first electrode and the second electrode. Thereby, an area directly covered by the phase-change material in the amorphous phase in a reset state of the memory device is larger than an area of the projection layer portion oriented to the phase-change material, such that a discontinuity in the conductance states of the memory device is created and a reduced minimal conductance state of the memory device in a reset state is enabled.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: Systems and methods for rollback of model-based provisioned network device configuration including a memory capable of storing a model-based provisioned data template that includes a data template sequence. Data associated with a request to transmit a target object request message are received and transmitted following a retrieval message that determines pre-configuration data of the target device. The pre-configuration data is stored and the target object request message is sent specifying CRUD semantics. A notification is received indicating an outcome of the execution and, if the execution outcome is unsuccessful, a rollback stack is retrieved that specifies CRUD semantics and the pre-configuration parameters are retrieved to restore the target device to a pre-request state. If the execution outcome is successful, a second target object request message is retrieved from a list of target devices.

Abstract: Existing techniques of managing Electronic Design Automation (EDA) on cloud are based on pre-defined policies which result in costly burst patterns and server farm tilt. Embodiments of present disclosure overcomes these drawbacks by a method and system for managing EDA on cloud which employ machine learning to predict optimal resource configurations for deploying EDA jobs and configuration circuit on cloud that holds resources required by the optimal resource configuration. Further, different Cloud Service Providers (CSP) are evaluated to determine least cost CSP which has the desired configuration circuit. Completion time of jobs and time required to burst the jobs on cloud are calculated based on which a wait time is determined. The jobs are retained in the queue for corresponding wait time before deploying them on the cloud. The jobs are deployed on the on-prem infrastructure if resources are freed up before the wait time.

Abstract: A memory device enabling a reduced minimal conductance state may be provided. The device comprises a first electrode, a second electrode and phase-change material between the first electrode and the second electrode, wherein the phase-change material enables a plurality of conductivity states depending on the ratio between a crystalline and an amorphous phase of the phase-change material. The memory device comprises additionally a projection layer portion in a region between the first electrode and the second electrode. Thereby, an area directly covered by the phase-change material in the amorphous phase in a reset state of the memory device is larger than an area of the projection layer portion oriented to the phase-change material, such that a discontinuity in the conductance states of the memory device is created and a reduced minimal conductance state of the memory device in a reset state is enabled.

Abstract: Systems and methods for rollback of model-based provisioned network device configuration including a memory capable of storing a model-based provisioned data template that includes a data template sequence. Data associated with a request to transmit a target object request message are received and transmitted following a retrieval message that determines pre-configuration data of the target device. The pre-configuration data is stored and the target object request message is sent specifying CRUD semantics. A notification is received indicating an outcome of the execution and, if the execution outcome is unsuccessful, a rollback stack is retrieved that specifies CRUD semantics and the pre-configuration parameters are retrieved to restore the target device to a pre-request state. If the execution outcome is successful, a second target object request message is retrieved from a list of target devices.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: A projected memory device includes a carbon-based projection component. The device includes two electrodes, a memory segment, and a projection component. The projection component and the memory segment form a dual element that connects the two electrodes. The projection component extends parallel to and in contact with the memory segment. The memory segment includes a resistive memory material, while the projection component includes a thin film of non-insulating material that essentially comprises carbon. In a particular implementation, the non-insulating material and the projection component essentially comprises amorphous carbon. Using carbon and, in particular, amorphous carbon, as a main component of the projection component, allows unprecedented flexibility to be achieved when tuning the electrical resistance of the projection component.

Abstract: Systems and methods for rollback of model-based provisioned network device configuration including a memory capable of storing a model-based provisioned data template that includes a data template sequence. Data associated with a request to transmit a target object request message are received and transmitted following a retrieval message that determines pre-configuration data of the target device. The pre-configuration data is stored and the target object request message is sent specifying CRUD semantics. A notification is received indicating an outcome of the execution and, if the execution outcome is unsuccessful, a rollback stack is retrieved that specifies CRUD semantics and the pre-configuration parameters are retrieved to restore the target device to a pre-request state. If the execution outcome is successful, a second target object request message is retrieved from a list of target devices.

Abstract: Systems and methods for building service templates that allow for an agentless, data-driven and stateful automation of a provisioning of services to mobile network customers. Data associated with a request to create a target schema object class for a device and protocol are received. Based on the device and protocol information, a set of data fields associated with CRUD semantics is retrieved from either a database or from user provided data. A decorated target object class is created based on the requested target schema object class. A subrecipe is created including the decorated target object class, and one or more other decorated target object classes. A recipe is processed for transmission to an execution engine to form a service instance, the service instance being customizable by an operator for a specific network device such that the service instance data fields that are not pre-filled can be customized by the operator.

Abstract: Systems and methods for building service templates that allow for an agentless, data-driven and stateful automation of a provisioning of services to mobile network customers. Data associated with a request to create a target schema object class for a device and protocol are received. Based on the device and protocol information, a set of data fields associated with CRUD semantics is retrieved from either a database or from user provided data. A decorated target object class is created based on the requested target schema object class. A subrecipe is created including the decorated target object class, and one or more other decorated target object classes. A recipe is processed for transmission to an execution engine to form a service instance, the service instance being customizable by an operator for a specific network device such that the service instance data fields that are not pre-filled can be customized by the operator.

Abstract: The present disclosure relates to an apparatus for a memristor crossbar array. The apparatus comprises an adjustment circuit configured for receiving a current that is output by the array at an actual operating condition of the array. The apparatus further comprises a calibration circuit configured for determining a measured or modelled variation of output currents of the array at the actual operating condition with respect to a reference operating condition, wherein the adjustment circuit is configured to adjust the output current by the variation.

Abstract: Systems and methods for rollback of model-based provisioned network device configuration including a memory capable of storing a model-based provisioned data template that includes a data template sequence. Data associated with a request to transmit a target object request message are received and transmitted following a retrieval message that determines pre-configuration data of the target device. The pre-configuration data is stored and the target object request message is sent specifying CRUD semantics. A notification is received indicating an outcome of the execution and, if the execution outcome is unsuccessful, a rollback stack is retrieved that specifies CRUD semantics and the pre-configuration parameters are retrieved to restore the target device to a pre-request state. If the execution outcome is successful, a second target object request message is retrieved from a list of target devices.

Abstract: The present disclosure relates to an apparatus for a memristor crossbar array. The apparatus comprises an adjustment circuit configured for receiving a current that is output by the array at an actual operating condition of the array. The apparatus further comprises a calibration circuit configured for determining a measured or modelled variation of output currents of the array at the actual operating condition with respect to a reference operating condition, wherein the adjustment circuit is configured to adjust the output current by the variation.

Abstract: Apparatus including: memory cell unit(s) having a variable-resistance channel component (CC) extending between first and second supply terminals for supplying read and write (R/W) signals to the unit in respective R/W modes, and resistive memory elements (RMEs) arranged along the CC, RME includes resistive memory material (RMM), extending along a respective channel segment (CHS) of the CC in contact therewith, in which respective lengths along that CHS of high- and low-resistance regions is variable in write mode, and a gate terminal provided on that CHS for controlling resistance of the CHS in response to control signal(s) (CS) applied to the gate terminal; and circuitry configured to apply the CS such that, in read mode, a RME(s) is selected by applying a CS producing CHS with resistance between the resistance regions of the RMM; and remaining RME(s) are deselected by applying CS producing CHS having resistance less than the low-resistance region.

Abstract: Apparatus including: memory cell unit(s) having a variable-resistance channel component (CC) extending between first and second supply terminals for supplying read and write (R/W) signals to the unit in respective R/W modes, and resistive memory elements (RMEs) arranged along the CC, RME includes resistive memory material (RMM), extending along a respective channel segment (CHS) of the CC in contact therewith, in which respective lengths along that CHS of high- and low-resistance regions is variable in write mode, and a gate terminal provided on that CHS for controlling resistance of the CHS in response to control signal(s) (CS) applied to the gate terminal; and circuitry configured to apply the CS such that, in read mode, a RME(s) is selected by applying a CS producing CHS with resistance between the resistance regions of the RMM; and remaining RME(s) are deselected by applying CS producing CHS having resistance less than the low-resistance region.

Abstract: Apparatus including: memory cell unit(s) having a variable-resistance channel component (CC) extending between first and second supply terminals for supplying read and write (R/W) signals to the unit in respective R/W modes, and resistive memory elements (RMEs) arranged along the CC, RME includes resistive memory material (RMM), extending along a respective channel segment (CHS) of the CC in contact therewith, in which respective lengths along that CHS of high- and low-resistance regions is variable in write mode, and a gate terminal provided on that CHS for controlling resistance of the CHS in response to control signal(s) (CS) applied to the gate terminal; and circuitry configured to apply the CS such that, in read mode, a RME(s) is selected by applying a CS producing CHS with resistance between the resistance regions of the RMM; and remaining RME(s) are deselected by applying CS producing CHS having resistance less than the low-resistance region.

Abstract: Apparatus including: memory cell unit(s) having a variable-resistance channel component (CC) extending between first and second supply terminals for supplying read and write (R/W) signals to the unit in respective R/W modes, and resistive memory elements (RMEs) arranged along the CC, RME includes resistive memory material (RMM), extending along a respective channel segment (CHS) of the CC in contact therewith, in which respective lengths along that CHS of high- and low-resistance regions is variable in write mode, and a gate terminal provided on that CHS for controlling resistance of the CHS in response to control signal(s) (CS) applied to the gate terminal; and circuitry configured to apply the CS such that, in read mode, a RME(s) is selected by applying a CS producing CHS with resistance between the resistance regions of the RMM; and remaining RME(s) are deselected by applying CS producing CHS having resistance less than the low-resistance region.