Abstract: Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Abstract: Methods, devices, and systems for double-sided cooling of laser diodes are provided. In one aspect, a laser diode assembly includes a first heat sink, a plurality of submounts spaced apart from one another on the first heat sink, a plurality of laser diodes, and a second heat sink on top sides of the plurality of laser diodes. Each laser diode includes a corresponding active layer between a first-type doped semiconductor layer and a second-type doped semiconductor layer. A bottom side of each laser diode is positioned on a different corresponding submount of the plurality of submounts. The plurality of laser diode are electrically connected in series.

Abstract: A semiconductor laser diode includes multiple layers stacked along a first direction, in which the multiple layers include: a first multiple of semiconductor layers; an optical waveguide on the first multiple of semiconductor layers, in which the optical waveguide includes a semiconductor active region for generating laser light, and in which the optical waveguide defines a resonant cavity having an optical axis; and a second multiple of semiconductor layers on the optical waveguide region, in which a resistivity profile of at least one layer of the multiple layers varies gradually between a maximum resistivity and a minimum resistivity along a second direction extending orthogonal to the first direction, in which a distance between the maximum resistivity and the minimum resistivity is greater than at least about 2 microns.

Abstract: A special type of Distributed Bragg Reflectors (DBRs) is provided. Semiconductor resonant cavity devices for emitting or absorbing light are also provided. A DBR is provided for reflecting radiation with a wavelength &lgr; includes at least one mirror pair. Each mirror pair comprises a bottom layer and a top layer, the top layer of one mirror pair comprising gallium phosphide (GaP) and having an optical thickness of substantially an odd multiple of &lgr;/4. A resonant cavity device for emitting or absorbing light with a wavelength &lgr; may comprise a first mirror and a second mirror with an active region located therebetween. The second mirror may comprise a stack of DBRs including at least one mirror pair, the mirror pair having at least a top layer and a bottom layer. The top layer is the layer most remote from the first mirror, and this layer is essentially composed of gallium phosphide (GaP) and has an optical thickness of substantially an odd multiple of &lgr;/4.