Abstract: A receiver circuit holds an output voltage at a first output voltage level using a first device of a first type coupled between a first node and a first power supply node, and a second device of a second type coupled between the first node and the first power supply node. The first device is selectively enabled using an input signal. The second device is selectively enabled using a feedback signal. The second device is substantially larger than the first device. The receiver circuit switches the output voltage from the first output voltage level to a second output voltage level responsive to an input voltage level transitioning across a first threshold voltage level from a first input voltage level to a second input voltage level.

Abstract: Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.

Abstract: Various embodiments of a gate oxide breakdown detection technique detect gate oxide degradation due to stress on a per part basis without destroying functional circuits for an intended application. Stress on the gate oxide may be applied while nominal drain currents flow through a device, thereby stressing the device under conditions similar to actual operating conditions. The technique is relatively fast and does not require analog amplifiers or tuning of substantial amounts of other additional circuitry as compared to conventional gate oxide breakdown detection techniques.