Patents by Inventor Prasanth M

Prasanth M has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12100660
    Abstract: A system and method for creating layout for standard cells are described. In various implementations, a semiconductor fabrication process (or process) forms a power signal route in a same metal zero track reserved for power rails. The process forms a contact layer with inserted spacing underneath the power signal route. Along the track, this contact layer has physical contact with the power signal route with a first distance greater than a width of any signal route in any metal layer orthogonal to the power signal route, and has no physical contact with the power signal route with a second distance greater than the width. One or more signal routes in the local interconnect layer are routed through this spacing. Without this spacing, signals would be routed through this area using the metal one layer, which increases signal congestion.
    Type: Grant
    Filed: October 4, 2021
    Date of Patent: September 24, 2024
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Partha Pratim Ghosh, Pratap Kumar Das, Prasanth M
  • Patent number: 11848269
    Abstract: A system and method for creating layout for standard cells are described. In various implementations, a floating metal net in the metal zero layer of a standard cell is selected for conversion to a power rail. The metal zero layer is a lowest metal layer above the gate region of a transistor. A semiconductor process (or process) forms a power rail in a metal zero track reserved for power rails. The process forms another power rail in a metal zero track reserved for floating metal nets, and electrically shorts the two power rails using a local interconnect layer between the two power rails. The charging and discharging times of a source region physically connected to the two power rails decreases.
    Type: Grant
    Filed: October 4, 2021
    Date of Patent: December 19, 2023
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Partha Pratim Ghosh, Pratap Kumar Das, Prasanth M
  • Publication number: 20230107306
    Abstract: A system and method for creating layout for standard cells are described. In various implementations, a floating metal net in the metal zero layer of a standard cell is selected for conversion to a power rail. The metal zero layer is a lowest metal layer above the gate region of a transistor. A semiconductor process (or process) forms a power rail in a metal zero track reserved for power rails. The process forms another power rail in a metal zero track reserved for floating metal nets, and electrically shorts the two power rails using a local interconnect layer between the two power rails. The charging and discharging times of a source region physically connected to the two power rails decreases.
    Type: Application
    Filed: October 4, 2021
    Publication date: April 6, 2023
    Inventors: Partha Pratim Ghosh, Pratap Kumar Das, Prasanth M
  • Publication number: 20230106921
    Abstract: A system and method for creating layout for standard cells are described. In various implementations, a semiconductor fabrication process (or process) forms a power signal route in a same metal zero track reserved for power rails. The process forms a contact layer with inserted spacing underneath the power signal route. Along the track, this contact layer has physical contact with the power signal route with a first distance greater than a width of any signal route in any metal layer orthogonal to the power signal route, and has no physical contact with the power signal route with a second distance greater than the width. One or more signal routes in the local interconnect layer are routed through this spacing. Without this spacing, signals would be routed through this area using the metal one layer, which increases signal congestion.
    Type: Application
    Filed: October 4, 2021
    Publication date: April 6, 2023
    Inventors: Partha Pratim Ghosh, Pratap Kumar Das, Prasanth M