Patents by Inventor Prashant Chaudhry

Prashant Chaudhry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell device and method for operating a memory cell device
    Patent number: 11508417
    Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: November 22, 2022
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Gunther Lehmann, Prashant Chaudhry, Frederic Gueganton, Gurushiddappa Naduvinamane, Steffen Schumann
  • Memory Cell Device and Method for Operating a Memory Cell Device
    Publication number: 20210375330
    Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.
    Type: Application
    Filed: August 11, 2021
    Publication date: December 2, 2021
    Inventors: Gunther Lehmann, Prashant Chaudhry, Frederic Gueganton, Gurushiddappa Naduvinamane, Steffen Schumann
  • Memory cell device and method for operating a memory cell device
    Patent number: 11139003
    Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: October 5, 2021
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Gunther Lehmann, Prashant Chaudhry, Frederic Gueganton, Gurushiddappa Naduvinamane, Steffen Schumann
  • Memory Cell Device and Method for Operating a Memory Cell Device
    Publication number: 20200202901
    Abstract: In accordance with an embodiment, a memory cell device includes at least one memory cell; a first switch connected between the at least one memory cell and a reference potential node; a second switch connected between the at least one memory cell and the reference potential node, and switch driver logic adapted to put the first switch selectively into one of at least three operating states by activation or deactivation of a first subcircuit of the switch driver logic, wherein the at least three operating states comprises an on state, an off state, and a conductive state in which an electrical conductivity of the first switch is lower than in the on state and higher than in the off state, and put the second switch selectively into one of the at least three operating states by activation or deactivation of a second subcircuit of the switch driver logic.
    Type: Application
    Filed: December 12, 2019
    Publication date: June 25, 2020
    Inventors: Gunther Lehmann, Prashant Chaudhry, Frederic Gueganton, Gurushiddappa Naduvinamane, Steffen Schumann