Patents by Inventor Prashant KULSHRESHTHA

Prashant KULSHRESHTHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESPONSIVE LAYER FOR GAP FILL AND PLANARIZATION
    Publication number: 20260354143
    Abstract: Embodiments described herein relate to a method that includes depositing a responsive layer over a patterned layer, where the responsive layer has a surface with a first flatness. In an embodiment, the method further includes treating the responsive layer with a stimulus, where the treated responsive layer is reflowed by the stimulus to obtain a second flatness along the surface that is flatter than the first flatness.
    Type: Application
    Filed: May 1, 2025
    Publication date: November 5, 2026
    Inventors: KEVIN GU, RUDY WOJTECKI, ZHIYU HUANG, PRASHANT KULSHRESHTHA, ISHWAR SINGH, SIVANANDHA KANAKASABAPATHY, CHING-YU CHANG
  • HIGH TEMPERATURE ELECTROSTATIC CHUCKING WITH DIELECTRIC CONSTANT ENGINEERED IN-SITU CHARGE TRAP MATERIALS
    Publication number: 20190355609
    Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
    Type: Application
    Filed: June 13, 2019
    Publication date: November 21, 2019
    Inventors: Prashant KULSHRESHTHA, Kwangduk Douglas LEE, Bok Hoen KIM, Zheng John YE, Swayambhu Prasad BEHERA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Jian J. CHEN
  • High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
    Patent number: 10325800
    Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: June 18, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Prashant Kulshreshtha, Kwangduk Douglas Lee, Bok Hoen Kim, Zheng John Ye, Swayambhu Prasad Behera, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Jian J. Chen
  • HIGH TEMPERATURE ELECTROSTATIC CHUCKING WITH DIELECTRIC CONSTANT ENGINEERED IN-SITU CHARGE TRAP MATERIALS
    Publication number: 20160064264
    Abstract: Techniques are disclosed for methods and apparatuses for increasing the breakdown voltage while substantially reducing the voltage leakage of an electrostatic chuck at temperatures exceeding about 300 degrees Celsius in a processing chamber.
    Type: Application
    Filed: August 26, 2014
    Publication date: March 3, 2016
    Inventors: Prashant KULSHRESHTHA, Kwangduk Douglas LEE, Bok Hoen KIM, Zheng John YE, Swayambhu Prasad BEHERA, Ganesh BALASUBRAMANIAN, Juan Carlos ROCHA-ALVAREZ, Jian J. CHEN