Abstract: A carbon nanotube sensor device includes one or more carbon nanotubes and a functionalization layer. An outer surface of the one or more carbon nanotubes is coated with the functionalization layer and the functionalization layer includes a chemical compound that binds to one or more specific analytes. Binding of the one or more specific analytes to the functionalization layer alters an electrical property of the carbon nanotube sensor device and contributes to their detection. The functionalization layer includes a first layer stacked onto an outer surface of the carbon nanotubes, a second layer stacked onto the first layer and a third layer stacked onto the second layer. The first layer enables stacking of a polymer onto the carbon nanotubes. The second layer includes the polymer and the third layer includes the chemical compound that binds to the one or more a specific analytes.

Abstract: A carbon nanotube sensor device includes one or more carbon nanotubes and a functionalization layer. An outer surface of the one or more carbon nanotubes is coated with the functionalization layer and the functionalization layer includes a chemical compound that binds to one or more specific analytes. Binding of the one or more specific analytes to the functionalization layer alters an electrical property of the carbon nanotube sensor device and contributes to their detection. The functionalization layer includes a first layer stacked onto an outer surface of the carbon nanotubes, a second layer stacked onto the first layer and a third layer stacked onto the second layer. The first layer enables stacking of a polymer onto the carbon nanotubes. The second layer includes the polymer and the third layer includes the chemical compound that binds to the one or more a specific analytes.

Abstract: An assembly of nanoelements forms a three-dimensional nanoscale circuit interconnect for use in microelectronic devices. A process for producing the circuit interconnect includes using dielectrophoresis by applying an electrical field across a gap between vertically displaced non-coplanar microelectrodes in the presence of a liquid suspension of nanoelements such as nanoparticles or single-walled carbon nanotubes to form a nanoelement bridge connecting the microelectrodes. The assembly process can be carried out at room temperature, is compatible with conventional semiconductor fabrication, and has a high yield. The current-voltage curves obtained from the nanoelement bridge demonstrate that the assembly is functional with a resistance of ?40 ohms for gold nanoparticles. The method is suitable for making high density three-dimensional circuit interconnects, vertically integrated nanosensors, and for in-line testing of manufactured conductive nanoelements.

Abstract: An assembly of nanoelements forms a three-dimensional nanoscale circuit interconnect for use in microelectronic devices. A process for producing the circuit interconnect includes using dielectrophoresis by applying an electrical field across a gap between vertically displaced non-coplanar microelectrodes in the presence of a liquid suspension of nanoelements such as nanoparticles or single-walled carbon nanotubes to form a nanoelement bridge connecting the microelectrodes. The assembly process can be carried out at room temperature, is compatible with conventional semiconductor fabrication, and has a high yield. The current-voltage curves obtained from the nanoelement bridge demonstrate that the assembly is functional with a resistance of ?40 ohms for gold nanoparticles. The method is suitable for making high density three-dimensional circuit interconnects, vertically integrated nanosensors, and for in-line testing of manufactured conductive nanoelements.