Patents by Inventor Prashanth P. Madras

Prashanth P. Madras has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Strained perpendicular magnetic tunnel junction devices
    Patent number: 10636960
    Abstract: MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: April 28, 2020
    Assignee: Intel Corporation
    Inventors: Prashanth P. Madras, MD Tofizur Rahman, Christopher J. Wiegand, Brian Maertz, Oleg Golonzka, Kevin P. O'Brien, Mark L. Doczy, Brian S. Doyle, Tahir Ghani, Kaan Oguz
  • STRAINED PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICES
    Publication number: 20180287050
    Abstract: MTJ material stacks with a laterally strained free magnetic layer, STTM devices employing such stacks, and computing platforms employing such STTM devices. In some embodiments, perpendicular pMTJ material stacks included free magnetic layers that are compressively strained laterally by a surrounding material, which increases coercive field strength for a more stable device. In some embodiments, a pMTJ material stack is encased in a compressive-stressed material. In some further embodiments, a pMTJ material stack is encased first in a dielectric shell, permitting a conductive material to be deposited over the shell as the compressive-stressed, strain-inducing material layer.
    Type: Application
    Filed: September 25, 2015
    Publication date: October 4, 2018
    Applicant: Intel Corporation
    Inventors: Prashanth P. Madras, MD Tofizur Rahman, Christopher J. Wiegand, Brian Maertz, Oleg Golonzka, Kevin P. O'Brien, Mark L. Doczy, Brian S. Doyle, Tahir Ghani, Kaan Oguz