Patents by Inventor Prashanth Paramahans Manik

Prashanth Paramahans Manik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor with phase transition material region between channel region and each source/drain region
    Patent number: 11387364
    Abstract: A transistor includes a semiconductor substrate, a first source/drain region and a second source/drain region in the semiconductor substrate with a channel region between the source/drain regions, and a gate over the channel region. In addition, the transistor includes a first phase transition material (PTM) region between the first source/drain region and the channel region, and a second PTM region between the second source/drain region and the channel region. The PTM regions provide the transistor with improved off-state current (IOFF) without affecting the on-state current (ION), and thus an improved ION/IOFF ratio. The transition threshold of PTM regions from dielectric to conductor can be customized based on, for example, PTM material type, doping therein, and/or strain therein.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: July 12, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Avinash Lahgere, Prashanth Paramahans Manik, Peter Javorka, Ali Icel, Mohit Bajaj
  • TRANSISTOR WITH PHASE TRANSITION MATERIAL REGION BETWEEN CHANNEL REGION AND EACH SOURCE/DRAIN REGION
    Publication number: 20220140131
    Abstract: A transistor includes a semiconductor substrate, a first source/drain region and a second source/drain region in the semiconductor substrate with a channel region between the source/drain regions, and a gate over the channel region. In addition, the transistor includes a first phase transition material (PTM) region between the first source/drain region and the channel region, and a second PTM region between the second source/drain region and the channel region. The PTM regions provide the transistor with improved off-state current (IOFF) without affecting the on-state current (ION), and thus an improved ION/IOFF ratio. The transition threshold of PTM regions from dielectric to conductor can be customized based on, for example, PTM material type, doping therein, and/or strain therein.
    Type: Application
    Filed: November 3, 2020
    Publication date: May 5, 2022
    Inventors: Avinash Lahgere, Prashanth Paramahans Manik, Peter Javorka, Ali Icel, Mohit Bajaj