Patents by Inventor Prathap Pathi

Prathap Pathi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Preparation of anti-reflection and passivation layers of silicon surface
    Patent number: 10811546
    Abstract: A process of depositing zirconium oxide (ZrO2) layers possessing dual properties of anti-reflection and passivation of silicon surfaces, including passivation of n-type and p-type silicon substrates. To grow a ZrO2 anti-reflection passivation layer, a precursor layer of zirconium oxide is spun on a silicon surface then dried, pyrolyzed and fired at suitable contact firing conditions, avoiding additional deposition. Thermal annealing in a hydrogen environment improves passivation quality of ZrO2 layer to a level 3-4 times higher than that of fired films alone. ZrO2 dielectric passivation layers exhibit improved passivation quality after illumination due to photo-enhanced passivation and higher passivation quality at higher thermal budget suitable for screen printed metal contact firing, unlike standard PECVD deposited passivation layers. The method is adaptable for fabrication of silicon solar cells and other structures utilizing passivated layers.
    Type: Grant
    Filed: November 22, 2016
    Date of Patent: October 20, 2020
    Assignee: Council of Scientific & Industrial Research
    Inventors: Prathap Pathi, Rani Kalpana, Vandana, Sanjay Kumar Srivastava, Chandra Mohan Singh Rauthan, Parakram Kumar Singh
  • PREPARATION OF ANTI-REFLECTION AND PASSIVATION LAYERS OF SILICON SURFACE
    Publication number: 20180351010
    Abstract: A process of depositing zirconium oxide (ZrO2) layers possessing dual properties of anti-reflection and passivation of silicon surfaces, including passivation of n-type and p-type silicon substrates. To grow a ZrO2 anti-reflection passivation layer, a precursor layer of zirconium oxide is spun on a silicon surface then dried, pyrolyzed and fired at suitable contact firing conditions, avoiding additional deposition. Thermal annealing in a hydrogen environment improves passivation quality of ZrO2 layer to a level 3-4 times higher than that of fired films alone. ZrO2 dielectric passivation layers exhibit improved passivation quality after illumination due to photo-enhanced passivation and higher passivation quality at higher thermal budget suitable for screen printed metal contact firing, unlike standard PECVD deposited passivation layers. The method is adaptable for fabrication of silicon solar cells and other structures utilizing passivated layers.
    Type: Application
    Filed: November 22, 2016
    Publication date: December 6, 2018
    Applicant: Council of Scientific & Industrial Research
    Inventors: Prathap Pathi, Rani Kalpana, Sanjay Kumar Srivastava, Chandra Mohan Singh Rauthan, Parakram Kumar Singh