Abstract: A confinement ring for use in a plasma processing chamber includes an upper horizontal section, a vertical section, and a lower horizontal section. The upper horizontal section extends between an upper inner radius and an outer radius of the confinement ring, The lower horizontal section extends between an lower inner radius and the outer radius of the confinement ring, and includes an extension section that extends to the lower inner radius. A top surface of the lower horizontal section provides for an angle down toward the lower inner radius. The vertical section is disposed between the outer radius and an inside radius of the confinement ring. The vertical section connects the upper horizontal section to the lower horizontal section of the confinement ring.

Abstract: Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.

Abstract: Methods, systems, apparatuses, and computer programs are presented for controlling etch rate and plasma uniformity using magnetic fields. A semiconductor substrate processing apparatus includes a vacuum chamber including a processing zone for processing a substrate using capacitively coupled plasma (CCP). The apparatus further includes a magnetic field sensor configured to detect a signal representing a residual magnetic field associated with the vacuum chamber. At least one magnetic field source is configured to generate one or more supplemental magnetic fields through the processing zone of the vacuum chamber. A magnetic field controller is coupled to the magnetic field sensor and the at least one magnetic field source. The magnetic field controller is configured to adjust at least one characteristic of the one or more supplemental magnetic fields, causing the one or more supplemental magnetic fields to reduce the residual magnetic field to a pre-determined value.

Abstract: A plasma lining structure is used in a process chamber to block direct line-of-sight for plasma generated within to grounded surface. The plasma lining structure includes a plurality of sections to cover at least one or more portions of an inside surface of a plasma confinement structure disposed in the process chamber. The sections of the plasma lining structure are positioned between a plasma region and the sidewall of the plasma confinement structure, when the plasma lining structure and the plasma confinement structure are disposed in the plasma chamber, such that the sections directly face the plasma region.

Abstract: A thermally and electrically conductive gasket of a gasket set configured to be mounted between a faceplate and backing plate of a showerhead electrode assembly includes an inner gasket configured to be mounted on an inner electrode of a showerhead electrode assembly. The inner gasket includes a plurality of concentric flat rings connected by a plurality of spokes. A first annular gasket surrounds and is concentric with the inner gasket and includes a flat annular ring having a plurality of cutouts. A second annular gasket surrounds and is concentric with the first annular gasket and includes a flat annular ring having a plurality of cutouts. A third annular gasket surrounds and is concentric with the second annular gasket and includes a flat annular ring having a plurality of cutouts. The gasket accommodates gas injection holes, alignment pin holes, an alignment ring groove, and/or threaded holes.

Abstract: An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.

Abstract: An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.

Abstract: A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

Abstract: A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the showerhead electrode.

Abstract: A showerhead electrode and assembly useful for plasma etching includes cam locks which provide improved thermal contact between the showerhead electrode and a backing plate. The cam locks include cam shafts in the backing plate which engage enlarged heads of studs mounted on the showerhead electrode. The assembly can include an annular shroud surrounding the showerhead electrode and eight of the cam shafts in the backing plate can be operated such that each cam shaft simultaneously engages a stud on the annular shroud and a stud in an outer row of studs on the showerhead electrode. Another eight cam shafts can be operated such that each cam shaft engages a pair of studs on inner and middle rows of the studs mounted of the showerhead electrode.

Abstract: A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

Abstract: A substrate support for a plasma processing chamber has an angled sidewall at an upper periphery thereof. The substrate is surrounded by an edge ring which underlies a substrate supported on an upper substrate support surface of the substrate support during plasma processing. The angled sidewall is the only surface of the substrate support exposed and subject to byproduct deposition during plasma processing. The angled sidewall enhances sputtering rate of the byproduct deposition during an in situ chamber clean process wherein a cleaning gas supplied to the chamber is energized into a plasma state for cleaning the byproduct deposition.

Abstract: An inner electrode of a showerhead electrode assembly useful for plasma etching includes features providing improved positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. The assembly can include a thermal gasket set and fasteners such as bolts or cam locks located on a radius of ¼ to ½ the radius of the inner electrode. A method of assembling the inner electrode and gasket set to a supporting member is also provided.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the showerhead electrode.