Patents by Inventor Pravin Narawankar

Pravin Narawankar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sequential in-situ heating and deposition of halogen-doped silicon oxide
    Patent number: 6375744
    Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gas-fill and stability due to the lack of free fluorine in the film.
    Type: Grant
    Filed: March 27, 2001
    Date of Patent: April 23, 2002
    Assignee: Applied Materials, Inc.
    Inventors: Laxman Murugesh, Maciek Orczyk, Pravin Narawankar, Jianmin Qiao, Turgut Sahin
  • Sequential in-situ heating and deposition of halogen-doped silicon oxide
    Publication number: 20010020447
    Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.
    Type: Application
    Filed: March 27, 2001
    Publication date: September 13, 2001
    Inventors: Laxman Murugesh, Maciek Orczyk, Pravin Narawankar, Jianmin Qiao, Turgut Sahin
  • Sequential in-situ heating and deposition of halogen-doped silicon oxide
    Patent number: 6228781
    Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.
    Type: Grant
    Filed: April 2, 1997
    Date of Patent: May 8, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Laxman Murugesh, Maciek Orczyk, Pravin Narawankar, Jianmin Qiao, Turgut Sahin