Patents by Inventor Prem Kumar KANDASWAMY

Prem Kumar KANDASWAMY has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR STRUCTURE WITH BARRIER LAYER COMPRISING INDIUM ALUMINIUM NITRIDE AND METHOD OF GROWING THEREOF
    Publication number: 20240313101
    Abstract: A semiconductor structure includes: a substrate; an epitaxial III-N semiconductor layer stack on top of the substrate. The epitaxial III-N semiconductor layer stack includes: a first active III-N layer; a spacer layer on top of the first active III-N layer; a diffusion barrier layer on top of the spacer layer; a second active III-N layer on top of the diffusion barrier layer. The second active III-N layer includes Indium Aluminium Nitride; with a two-dimensional Electron Gas between the first active III-N layer and the second active III-N layer. The diffusion barrier layer includes Gallium Nitride; and wherein a thickness of the diffusion barrier layer is lower than 1 nm.
    Type: Application
    Filed: July 5, 2022
    Publication date: September 19, 2024
    Inventors: Joff DERLUYN, Prem Kumar KANDASWAMY, Lucas PETERSEN BARBOSA LIMA