Publication number: 20240287678
Abstract: Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQzRm, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): wherein R1, R2, R3, R4, R5, R6, R7, R8, Ra, Rb, Rc, Rd, Re, and Rf are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X?, and Y? are independently selected from nitrogen (N) and carbon (C).
Type:
Application
Filed:
April 22, 2024
Publication date:
August 29, 2024
Applicant:
Applied Materials, Inc.
Inventors:
Geetika Bajaj, Darshan Thakare, Prerna Goradia, Robert Jan Visser, Yixiong Yang, Jacqueline S. Wrench, Srinivas Gandikota