Abstract: A method for injecting a solid feed material through a solids injection lance includes creating flow conditions in an injection passageway of the lance so that at least a part of the feed material flowing along the passageway forms a buffer zone between a wall of a tube that defines the passageway and feed material flowing along a central section of the passageway.

Abstract: A smelting vessel (4) for producing molten metal includes a refractory lined hearth that in use is in contact with molten slag or molten metal in the smelting vessel, and the hearth includes a plurality of heat pipes (2.1) positioned in a refractory lining of at least a part of the hearth for cooling the refractory lining.

Abstract: A smelting vessel (4) for producing molten metal includes a refractory lined hearth that in use is in contact with molten slag or molten metal in the smelting vessel, and the hearth includes a plurality of heat pipes (2.1) positioned in a refractory lining of at least a part of the hearth for cooling the refractory lining.

Abstract: A method for injecting a solid feed material through a solids injection lance includes creating flow conditions in an injection passageway of the lance so that at least a part of the feed material flowing along the passageway forms a buffer zone between a wall of a tube that defines the passageway and feed material flowing along a central section of the passageway.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer.

Abstract: Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.

Abstract: A direct smelting plant for producing molten metal from a metalliferous feed material using a molten bath based direct melting process is disclosed. The plant includes a plurality of gas injection lances to inject the oxygen-containing gas into the vessel that extend downwardly through openings in a side wall of a direct smelting vessel.

Abstract: Solar cells and methods for their manufacture are disclosed. An example solar cell may comprise a substrate comprising a p-type base layer and an n-type selective emitter layer formed over the p-type base layer. The n-type selective emitter layer may comprise one or more first doped regions comprising implanted dopant and one or more second doped regions comprising diffused dopant. The one or more first doped regions may be more heavily doped than the one or more second doped regions. A p-n junction may be formed at the interface of the base layer and the selective emitter layer, such that the p-n junction and the selective emitter layer are both formed during a single anneal cycle.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include providing a substrate comprising a base layer and introducing n-type dopant to the front surface of the base layer by ion implantation. The substrate may be annealed by heating the substrate to a temperature to anneal the implant damage and activate the introduced dopant, thereby forming an n-type doped layer into the front surface of the base layer. Oxygen may be introduced during the annealing step to form a passivating oxide layer on the n-type doped layer. Back contacts may be screen-printed on the back surface of the base layer, and a p-type doped layer may be formed at the interface of the back surface of the base layer and the back contacts during firing of the back contacts. The back contacts may provide an electrical connection to the p-type doped layer.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. The firing of the back contact may form a p+ emitter layer at the interface of the substrate and back contacts, thus forming a p-n junction at the interface of the emitter layer and the substrate. Associated solar cells are also provided.

Abstract: Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

Abstract: The present invention relates to an apparatus for injecting gas into a vessel. The apparatus may include a gas flow duct and a central body within a forward end region of the duct. The central body and the gas flow duct form an annular nozzle for the discharge of gas from the duct. A plurality of flow directing vanes are disposed about the central body to impart swirl to a gas flow through the nozzle. The flow directing vanes have substantially straight leading end portions radiating outwardly from the central body and extending along the duct. The vanes also have substantially helical trailing end portions extending helically about the central body toward the front end of the duct and transition portions joining the leading end portions to the trailing end portions. The transition portions are shaped so as to merge smoothly with both the leading end portions and the trailing end portions and to smoothly and progressively change shape between them.

Abstract: A direct smelting plant for producing molten metal from a metalliferous feed material using a molten bath based direct melting process is disclosed. The plant includes a plurality of gas injection lances to inject the oxygen-containing gas into the vessel that extend downwardly through openings in a side wall of a direct smelting vessel.