Patents by Inventor Prithviraj Deshmukh

Prithviraj Deshmukh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell nanowires
    Patent number: 11905622
    Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.
    Type: Grant
    Filed: April 13, 2021
    Date of Patent: February 20, 2024
    Assignee: North Carolina A&T State University
    Inventors: Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma
  • High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell Nanowires
    Publication number: 20210317598
    Abstract: Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs(1-y)Sby, where y=about 0.03-0.07 and the first shell is formed from GaAs(1-x)SbxN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga1-mAlmAs, where m=0-0.2. Some nanowires have the structure GaAs(0.93-0.97)Sb(0.03-0.07)/GaAs(0.66-0.73)Sb(0.27-0.34)N/Ga(0.8-1)Al(0-0.2)As.
    Type: Application
    Filed: April 13, 2021
    Publication date: October 14, 2021
    Applicant: North Carolina A&T State University
    Inventors: Shanthi Iyer, Jia Li, Prithviraj Deshmukh, Manish Sharma