Patents by Inventor Prithwish Chatterjee
Prithwish Chatterjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12272484Abstract: An inductor can be formed in a coreless electronic substrate from magnetic materials and/or fabrication processes that do not result in the magnetic materials leaching into plating and/or etching solutions/chemistries, and results in a unique inductor structure. This may be achieved by forming the inductors from magnetic ferrites. The formation of the electronic substrates may also include process sequences that prevent exposure of the magnetic ferrites to the plating and/or etching solutions/chemistries.Type: GrantFiled: March 4, 2021Date of Patent: April 8, 2025Assignee: Intel CorporationInventors: Srinivas Pietambaram, Pooya Tadayon, Kristof Darmawikarta, Tarek Ibrahim, Prithwish Chatterjee
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Patent number: 11881463Abstract: A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.Type: GrantFiled: November 11, 2021Date of Patent: January 23, 2024Assignee: Intel CorporationInventors: Andrew J. Brown, Rahul Jain, Prithwish Chatterjee, Lauren A. Link, Sai Vadlamani
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Publication number: 20240014149Abstract: Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.Type: ApplicationFiled: September 25, 2023Publication date: January 11, 2024Inventors: Aleksandar ALEKSOV, Thomas SOUNART, Kristof DARMAWIKARTA, Henning BRAUNISCH, Prithwish CHATTERJEE, Andrew J. BROWN
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Patent number: 11862552Abstract: Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.Type: GrantFiled: January 3, 2022Date of Patent: January 2, 2024Assignee: Intel CorporationInventors: Sai Vadlamani, Prithwish Chatterjee, Robert A. May, Rahul S. Jain, Lauren A. Link, Andrew J. Brown, Kyu Oh Lee, Sheng C. Li
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Patent number: 11804455Abstract: Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.Type: GrantFiled: October 4, 2022Date of Patent: October 31, 2023Assignee: Intel CorporationInventors: Aleksandar Aleksov, Thomas Sounart, Kristof Darmawikarta, Henning Braunisch, Prithwish Chatterjee, Andrew J. Brown
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Patent number: 11651902Abstract: Embodiments herein relate to systems, apparatuses, processing, and techniques related to patterning one or more sides of a thin film capacitor (TFC) sheet, where the TFC sheet has a first side and a second side opposite the first side. The first side and the second side of the TFC sheet are metal and are separated by a dielectric layer, and the patterned TFC sheet is to provide at least one of a capacitor or a routing feature on a first side of a substrate that has the first side and a second side opposite the first side.Type: GrantFiled: June 29, 2018Date of Patent: May 16, 2023Assignee: Intel CorporationInventors: Rahul Jain, Andrew J. Brown, Prithwish Chatterjee, Sai Vadlamani, Lauren Link
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Patent number: 11610706Abstract: A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.Type: GrantFiled: January 12, 2018Date of Patent: March 21, 2023Assignee: Intel CorporationInventors: Sai Vadlamani, Prithwish Chatterjee, Rahul Jain, Kyu Oh Lee, Sheng C. Li, Andrew J. Brown, Lauren A. Link
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Patent number: 11574874Abstract: An apparatus system is provided which comprises: a photoimageable dielectric layer; a first interconnect structure formed through the photoimageable dielectric, the first interconnect structure formed at least in part using a lithography process; and a second interconnect structure formed through the photoimageable dielectric, the second interconnect structure formed at least in part using a laser drilling process.Type: GrantFiled: March 30, 2017Date of Patent: February 7, 2023Assignee: Intel CorporationInventors: Robert A. May, Sri Ranga Sai Boyapati, Kristof Darmawikarta, Hiroki Tanaka, Srinivas V. Pietambaram, Frank Truong, Praneeth Akkinepally, Andrew J. Brown, Lauren A. Link, Prithwish Chatterjee
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Patent number: 11552008Abstract: Disclosed herein are asymmetric cored integrated circuit (IC) package supports, and related devices and methods. For example, in some embodiments, an IC package support may include a core region having a first face and an opposing second face, a first buildup region at the first face of the core region, and a second buildup region at the second face of the core region. A thickness of the first buildup region may be different than a thickness of the second buildup region. In some embodiments, an inductor may be included in the core region.Type: GrantFiled: November 28, 2018Date of Patent: January 10, 2023Assignee: Intel CorporationInventors: Lauren Ashley Link, Andrew James Brown, Prithwish Chatterjee, Sai Vadlamani, Ying Wang, Chong Zhang
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Patent number: 11495552Abstract: Embodiments include an electronic package that includes a dielectric layer and a capacitor on the dielectric layer. In an embodiment, the capacitor comprises a first electrode disposed over the dielectric layer and a capacitor dielectric layer over the first electrode. In an embodiment, the capacitor dielectric layer is an amorphous dielectric layer. In an embodiment, the electronic package may also comprise a second electrode over the capacitor dielectric layer.Type: GrantFiled: June 29, 2018Date of Patent: November 8, 2022Assignee: Intel CorporationInventors: Aleksandar Aleksov, Thomas Sounart, Kristof Darmawikarta, Henning Braunisch, Prithwish Chatterjee, Andrew J. Brown
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Patent number: 11443885Abstract: Embodiments include inductors and methods of forming inductors. In an embodiment, an inductor may include a substrate core and a conductive through-hole through the substrate core. Embodiments may also include a magnetic sheath around the conductive through hole. In an embodiment, the magnetic sheath is separated from the plated through hole by a barrier layer. In an embodiment, the barrier layer is formed over an inner surface of the magnetic sheath and over first and second surfaces of the magnetic sheath.Type: GrantFiled: March 12, 2018Date of Patent: September 13, 2022Assignee: Intel CorporationInventors: Kristof Darmawikarta, Srinivas Pietambaram, Sandeep Gaan, Sri Ranga Sai Boyapati, Prithwish Chatterjee, Sameer Paital, Rahul Jain, Junnan Zhao
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Publication number: 20220285079Abstract: An inductor can be formed in a coreless electronic substrate from magnetic materials and/or fabrication processes that do not result in the magnetic materials leaching into plating and/or etching solutions/chemistries, and results in a unique inductor structure. This may be achieved by forming the inductors from magnetic ferrites. The formation of the electronic substrates may also include process sequences that prevent exposure of the magnetic ferrites to the plating and/or etching solutions/chemistries.Type: ApplicationFiled: March 4, 2021Publication date: September 8, 2022Applicant: Intel CorporationInventors: Srinivas Pietambaram, Pooya Tadayon, Kristof Darmawikarta, Tarek Ibrahim, Prithwish Chatterjee
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Patent number: 11432405Abstract: A package substrate is disclosed. The package substrate includes a substrate core, a cavity below the substrate core that extends from a surface of a first resist layer to a bottom surface of the package substrate, and a first terminal and a second terminal in the first resist layer. The package substrate also includes one or more passive components that are coupled inside the cavity to the first terminal and the second terminal.Type: GrantFiled: June 29, 2018Date of Patent: August 30, 2022Assignee: Intel CorporationInventors: Rahul Jain, Prithwish Chatterjee, Kyu-oh Lee
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Publication number: 20220230951Abstract: Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: Intel CorporationInventors: Prithwish Chatterjee, Junnan Zhao, Sai Vadlamani, Ying Wang, Rahul Jain, Andrew J. Brown, Lauren A. Link, Cheng Xu, Sheng C. Li
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Patent number: 11335632Abstract: Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.Type: GrantFiled: December 28, 2017Date of Patent: May 17, 2022Assignee: Intel CorporationInventors: Prithwish Chatterjee, Junnan Zhao, Sai Vadlamani, Ying Wang, Rahul Jain, Andrew J. Brown, Lauren A. Link, Cheng Xu, Sheng C. Li
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Publication number: 20220130748Abstract: Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.Type: ApplicationFiled: January 3, 2022Publication date: April 28, 2022Applicant: INTEL CORPORATIONInventors: Sai Vadlamani, Prithwish Chatterjee, Robert A. May, Rahul S. Jain, Lauren A. Link, Andrew J. Brown, Kyu Oh Lee, Sheng C. Li
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Patent number: 11289263Abstract: An electronic structure may be fabricated comprising an electronic substrate having at least one photo-imageable dielectric layer and an inductor embedded in the electronic substrate, wherein the inductor comprises a magnetic material layer disposed within a via formed in the at least one photo-imageable dielectric layer and an electrically conductive via extending through the magnetic material layer. The electronic structure may further include an integrated circuit device attached to the electronic substrate and the electronic substrate may further be attached to a board, such as a motherboard.Type: GrantFiled: December 26, 2017Date of Patent: March 29, 2022Assignee: Intel CorporationInventors: Sai Vadlamani, Prithwish Chatterjee, Lauren A. Link, Andrew J. Brown
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Patent number: 11270959Abstract: Techniques for fabricating a semiconductor package comprising inductor features and a magnetic film are described. For one technique, fabricating a package includes: forming inductor features comprising a pad and a conductive line on a first build-up layer; forming a raised pad structure on the first build-up layer by fabricating a pillar structure on the pad, wherein a size of the pillar structure is approximately equal or equal to a corresponding size of the pad such that the pillar structure and the pad are aligned or minimally misaligned relative to each other; encapsulating the inductor features and the raised pad structure in a magnetic film; planarizing the magnetic film until top surfaces of the raised pad structure and magnetic film are co-planar; depositing an additional layer on the top surfaces; and forming a via on the raised pad structure by removing portions of the additional layer above the raised pad structure.Type: GrantFiled: March 23, 2018Date of Patent: March 8, 2022Assignee: Intel CorporationInventors: Kirstof Darmawikarta, Srinivas Pietambaram, Prithwish Chatterjee, Sri Ranga Sai Boyapati, Wei Lun Jen
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Publication number: 20220068847Abstract: A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.Type: ApplicationFiled: November 11, 2021Publication date: March 3, 2022Inventors: Andrew J. Brown, Rahul Jain, Prithwish Chatterjee, Lauren A. Link, Sai Vadlamani
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Patent number: 11251113Abstract: Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.Type: GrantFiled: December 27, 2017Date of Patent: February 15, 2022Assignee: Intel CorporationInventors: Sai Vadlamani, Prithwish Chatterjee, Robert A. May, Rahul S. Jain, Lauren A. Link, Andrew J. Brown, Kyu Oh Lee, Sheng C. Li