Abstract: A power amplifier, such as a radio-frequency (RF) Doherty power amplifier, for amplifying an input signal to an output signal is disclosed. The power amplifier includes a peaking amplifier circuit, where the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate. The power amplifier further includes a main amplifier circuit, where the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.

Abstract: A number of different types of semiconductor material structures and wafers, including epiwafers, are described herein. The semiconductor material wafers are optimized in certain aspects to form transistor amplifiers for use with new modulation communications systems. A semiconductor material wafer includes a silicon carbide substrate and at least one III-nitride material layer over the silicon carbide substrate. The semiconductor material wafers can include layers consisting of semiconductor materials without dopants such as iron or carbon, formed over the silicon carbide substrate.

Abstract: A power amplifier, such as a radio-frequency (RF) Doherty power amplifier, for amplifying an input signal to an output signal is disclosed. The power amplifier includes a peaking amplifier circuit, where the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate. The power amplifier further includes a main amplifier circuit, where the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.

Abstract: New types, structures, and arrangements of capacitor networks for harmonic control and other purposes are described. An example capacitor network includes a bond pad and metal-insulator-metal (MIM) capacitors positioned over the top side of the substrate and along different sides of the bond pad. A first metal layer of each of the plurality of MIM capacitors is electrically coupled to the bond pad. A second metal layer of each of the plurality of MIM capacitors is electrically coupled to a ground plane on a bottom side of the substrate by a through-substrate via. The MIM capacitors can be arranged around the bond pad in the capacitor network for a tailored capacitance. A matching network in the integrated device can incorporate the capacitor network to reduce loss, provide better harmonic termination, and achieve better phase alignment for the power devices.

Abstract: New types, structures, and arrangements of capacitor networks for harmonic control and other purposes are presented. In one example, an integrated device includes a capacitor network and one or more power devices. The capacitor network includes a bond pad and metal-insulator-metal (MIM) capacitors. The capacitors include a first metal layer, a second metal layer, an insulator layer between the first and second metal layers, and one or more through-substrate vias. The first metal layer is coupled to the bond pad, and the second metal layer is coupled to a ground plane on a bottom side of the substrate by the vias. A number of capacitors can be arranged around the bond pad in the capacitor network for a tailored capacitance. A matching network in the integrated device can incorporate the capacitor network to reduce loss, provide better harmonic termination, and achieve better phase alignment for the power devices.

Abstract: A power amplifier, such as a radio-frequency (RF) Doherty power amplifier, for amplifying an input signal to an output signal is disclosed. The power amplifier includes a peaking amplifier circuit, where the peaking amplifier circuit is formed in gallium nitride materials on a silicon substrate. The power amplifier further includes a main amplifier circuit, where the main amplifier circuit is formed in gallium nitride materials on a silicon carbide substrate.

Abstract: New types, structures, and arrangements of capacitor networks for harmonic control and other purposes are presented. In one example, an integrated device includes a capacitor network and one or more power devices. The capacitor network includes a bond pad and metal-insulator-metal (MIM) capacitors. The capacitors include a first metal layer, a second metal layer, an insulator layer between the first and second metal layers, and one or more through-substrate vias. The first metal layer is coupled to the bond pad, and the second metal layer is coupled to a ground plane on a bottom side of the substrate by the vias. A number of capacitors can be arranged around the bond pad in the capacitor network for a tailored capacitance. A matching network in the integrated device can incorporate the capacitor network to reduce loss, provide better harmonic termination, and achieve better phase alignment for the power devices.