Patents by Inventor Priyanka DASH
Priyanka DASH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200098547Abstract: Systems and methods for a process chamber that decreases the severity and occurrence of substrate defects due to loosened scale is discussed herein. A gas distribution assembly is disposed in a process chamber and includes a faceplate with a plurality of apertures formed therethrough and a second member. The faceplate is coupled to the second member which is configured to couple to the faceplate to reduce an exposed area of the faceplate and minimize an available area for material buildup during the release of gas into the process chamber. The second member is further configured to improve the glow of precursors into the process chamber. The gas distribution assembly can be heated before and during process chamber operations, and can remain heated between process chamber operations.Type: ApplicationFiled: September 25, 2019Publication date: March 26, 2020Inventors: Priyanka DASH, Zhijun JIANG, Ganesh BALASUBRAMANIAN, Qiang MA, Kalyanjit GHOSH, Kaushik ALAYAVALLI, Yuxing ZHANG, Daniel HWUNG, Shawyon JAFARI
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Patent number: 10600624Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.Type: GrantFiled: December 21, 2018Date of Patent: March 24, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Kalyanjit Ghosh, Sanjeev Baluja, Mayur G. Kulkarni, Shailendra Srivastava, Tejas Ulavi, Yusheng Alvin Zhou, Amit Kumar Bansal, Priyanka Dash, Zhijun Jiang, Ganesh Balasubramanian, Qiang Ma, Kaushik Alayavalli, Yuxing Zhang, Daniel Hwung, Shawyon Jafari
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Publication number: 20190122872Abstract: Systems and methods for depositing a film in a PECVD chamber while reducing residue buildup in the chamber. In some embodiments disclosed herein, a processing chamber includes a chamber body, a substrate support, a showerhead, and one or more heaters configured to heat the showerhead. In some embodiments, the processing chamber includes a controller.Type: ApplicationFiled: December 21, 2018Publication date: April 25, 2019Inventors: Kalyanjit GHOSH, Sanjeev BALUJA, Mayur G. KULKARNI, Shailendra SRIVASTAVA, Tejas ULAVI, Yusheng ALVIN ZHOU, Amit Kumar BANSAL, Priyanka DASH, Zhijun JIANG, Ganesh BALASUBRAMANIAN, Qiang MA, Kaushik ALAYAVALLI, Yuxing ZHANG, Daniel HWUNG, Shawyon JAFARI
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Patent number: 9793108Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.Type: GrantFiled: June 25, 2015Date of Patent: October 17, 2017Assignee: APPLIED MATERIAL, INC.Inventors: He Ren, Mehul B. Naik, Deenesh Padhi, Priyanka Dash, Bhaskar Kumar, Alexandros T. Demos
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Patent number: 9659765Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.Type: GrantFiled: July 15, 2015Date of Patent: May 23, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Kang Sub Yim, Mahendra Chhabra, Kelvin Chan, Alexandros T. Demos, Priyanka Dash
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Patent number: 9646876Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.Type: GrantFiled: February 27, 2015Date of Patent: May 9, 2017Assignee: Applied Materials, Inc.Inventors: Deenesh Padhi, Srinivas Guggilla, Alexandros T. Demos, Bhaskar Kumar, He Ren, Priyanka Dash
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Publication number: 20170125241Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.Type: ApplicationFiled: March 18, 2016Publication date: May 4, 2017Inventors: Shaunak MUKHERJEE, Kang Sub YIM, Deenesh PADHI, Kevin M. CHO, Khoi Anh PHAN, Chien-An CHEN, Priyanka DASH
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Publication number: 20160379819Abstract: A method for sealing porous low-k dielectric films is provided. The method comprises exposing a substrate to UV radiation and a first reactive gas, wherein the substrate has an open feature defined therein, the open feature defined by a porous low-k dielectric layer and a conductive material, wherein the porous low-k dielectric layer is a silicon and carbon containing material and selectively forming a pore sealing layer in the open feature on exposed surfaces of the porous low-k dielectric layer using UV assisted photochemical vapor deposition.Type: ApplicationFiled: June 25, 2015Publication date: December 29, 2016Inventors: He REN, Mehul B. NAIK, Deenesh PADHI, Priyanka DASH, Bhaskar KUMAR, Alexandros T. DEMOS
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Publication number: 20160300757Abstract: A method of forming features in a low-k dielectric layer on a patterned substrate is described. A via, trench or a dual damascene structure may be formed in the low-k dielectric layer. Patterning the low-k dielectric layer may also increase the dielectric constant. The patterned substrate is processed by shining UV-light on the low-k dielectric layer while exposing the low-k dielectric layer to a carbon-and-hydrogen-containing precursor to restore or lower the dielectric constant. Then, a conformal hermetic layer is formed on the low-k dielectric layer. The conformal hermetic layer is configured to keep water and contaminants out of the low-k dielectric layer during later processing and during the lifespan of the completed device.Type: ApplicationFiled: March 29, 2016Publication date: October 13, 2016Applicant: Applied Materials, Inc.Inventors: Priyanka Dash, Deenesh Padhi
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Publication number: 20160254181Abstract: A method of forming features in a dielectric layer is described. A via, trench or a dual-damascene structure may be present in the dielectric layer prior to depositing a conformal aluminum nitride layer. The conformal aluminum nitride layer is configured to serve as a barrier to prevent diffusion across the barrier. The methods of forming the aluminum nitride layer involve the alternating exposure to two precursor treatments (like ALD) to achieve high conformality. The high conformality of the aluminum nitride barrier layer enables the thickness to be reduced and the effective conductivity of the subsequent gapfill metal layer to be increased.Type: ApplicationFiled: February 27, 2015Publication date: September 1, 2016Applicant: APPLIED MATERIALS, INC.Inventors: Deenesh Padhi, Srinivas Guggilla, Alexandros T. Demos, Bhaskar Kumar, He Ren, Priyanka Dash
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Publication number: 20160020090Abstract: Embodiments described herein generally relate to methods for processing a dielectric film on a substrate with UV energy. In one embodiment, a precursor film is deposited on the substrate, and the precursor film includes a plurality of porogen molecules. The precursor film is first exposed to UV energy at a first temperature to initiate a cross-linking process. After a first predetermined time, the temperature of the precursor film is increased to a second temperature for a second predetermined time to remove porogen molecules and to continue the cross-linking process. The resulting film is a porous low-k dielectric film having improved elastic modulus and hardness.Type: ApplicationFiled: July 15, 2015Publication date: January 21, 2016Inventors: Kang Sub YIM, Mahendra CHHABRA, Kelvin CHAN, Alexandros T. DEMOS, Priyanka DASH