Abstract: A method includes responding to a wear-level operation request by copying data from a first portion of a first memory array to a second portion of the first memory array, and copying metadata associated with the data from a third portion of a second memory array to a fourth portion of the second memory array. The first memory array includes a NAND or NAND-based memory array, and the second memory array includes non-volatile memory including at least one of the group consisting of: phase-change memory, EEPROM, and NOR flash memory.

Abstract: A method includes responding to a wear-level operation request by copying data from a first portion of a first memory array to a second portion of the first memory array, and copying metadata associated with the data from a third portion of a second memory array to a fourth portion of the second memory array. The first memory array includes a NAND or NAND-based memory array, and the second memory array includes non-volatile memory including at least one of the group consisting of: phase-change memory, EEPROM, and NOR flash memory.

Abstract: A method includes responding to a wear-level operation request by copying data from a first portion of a first memory array to a second portion of the first memory array, and copying metadata associated with the data from a third portion of a second memory array to a fourth portion of the second memory array. The first memory array includes a NAND or NAND-based memory array, and the second memory array includes non-volatile memory including at least one of the group consisting of: phase-change memory, EEPROM, and NOR flash memory.

Abstract: Subject matter disclosed herein relates to sub-block accessible cache memory.

Abstract: Apparatus and methods for caching data are disclosed. Data is stored in a non-sub-block accessible nonvolatile memory, such as a NAND flash. A portion of the stored data is cached in a cache implemented using phase change memory using a sub-block accessible address.

Abstract: Subject matter disclosed herein relates to sub-block accessible cache memory.

Abstract: Subject matter disclosed herein relates to storing information via a NAND flash translation layer.

Abstract: A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.

Abstract: A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. Each block including at least one failed cell in the first subset is located during a test on wafer of the non-volatile memory device. Each block is marked as bad, and a bad block address table of respective codes is stored in a non-volatile memory buffer. At power-on, the bad block address table is copied from the non-volatile memory buffer to the random access memory. A block of memory cells of the first subset is verified as bad by looking up the bad block address table, and if a block is bad, then remapping access to a corresponding block of redundancy cells.