Abstract: A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

Abstract: A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

Abstract: A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

Abstract: A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).

Abstract: A method of manufacturing semiconductor components (200, 400, 700) includes assembling, packaging, and testing the semiconductor components (200, 400, 700) while the semiconductor components (200, 400, 700) are mounted on an adhesive layer (220). The method of can also keep the semiconductor components (200, 400, 700) mounted on the adhesive layer (220) between each of the assembling, packaging, and testing steps.

Abstract: A semiconductor component includes a semiconductor chip (341, 502, 601, 701, 1101, 1410, 1501) having first and second surfaces opposite each other, a semiconductor device (301) in the semiconductor chip (341, 502, 601, 701, 1101, 1410, 1501), and a flexible substrate (120, 401, 510, 610, 710, 1000, 1050, 1300, 1401, 1510, 1520) packaging the semiconductor chip (341, 502, 601, 701, 1101, 1410, 1501).

Abstract: An electronic component includes a semiconductor substrate (101, 301, 401), an electrically conductive layer (102, 103, 302, 303, 402, 403) supported by the semiconductor substrate (101, 301, 401), and a lead (110, 120, 210, 310, 410, 420) having an electrical coupling portion (112, 122, 212, 312, 412, 422) coupled to and supported by the electrically conductive layer (102, 103, 302, 303, 402, 403) wherein the electrical coupling portion (112, 122, 212, 312, 412, 422) has at least one notch (115, 215, 315) adjacent to the electrically conductive layer (102, 103, 302, 303, 402, 403).

Abstract: A method of manufacturing a semiconductor component includes applying an encapsulant (211) to a wafer (210, 430), degassing the encapsulant (211), and separating the wafer (210, 430) into a plurality of semiconductor components. Manufactured in this manner, the encapsulant (211) of the semiconductor component is substantially devoid of air bubbles and voids.

Abstract: An encapsulant (17) is applied to a semiconductor wafer (16). The bottom surface (28) of the wafer (16) is held substantially planar while curing the encapsulant (17). The bottom surface (28) is held against a substantially planar support plate (12) to facilitate holding the wafer (16) substantially planar. A polisher plate (18) is pressed against the encapsulant (17) to assist ensuring that the encapsulant has a substantially smooth surface and substantially uniform thickness.

Abstract: An optoelectronic device is fabricated by casting a transparent polymeric body surrounding an electronic component. A reflective layer is formed over the polymeric body. The reflective layer acts as a mirror to reflect light emitted by one electronic component to another electronic component which receives the light. By casting the polymeric body, a consistent and defined shape for optical transmission is provided for forming the shape of the reflective layer.

Abstract: A polyimide surface (18) of a semiconductor device (12) is pretreat the polyimide layer with a hydroxyl amine solution at an elevated temperature to form functional groups that react with an underfill encapsulant (16) to form covalent bonds during a cure cycle between the polyimide layer and the encapsulant material between the semiconductor device and a substrate (10). The hydroxyl amine solution include a reagent such as 2,(2-aminoethoxy) ethanol dissolved in a solvent like N-methyl pyrolidione at 65.degree. C. for sixty seconds. The hydroxyl amine solution may be sprayed onto the polyimide layer, or deposited by vapor deposition. The semiconductor die with the treated polyimide layer is attached to the substrate by DCA methods leaving a gap between the assemblies. The encapsulant is introduced between the semiconductor die and the substrate and cured to form a covalent bond with the polyimide layer and an environmental seal between the assemblies resulting in enhanced adhesion.

Abstract: A polyimide surface (18) of a semiconductor device (12) is pretreat the polyimide layer with a hydroxyl amine solution at an elevated temperature to generate functional groups that react with an underfill encapsulant (16) to form covalent bonds between the polyimide layer and the encapsulant material between the semiconductor device and a substrate (10). The hydroxyl amine solution include a reagent such as 2,(2-aminoethoxy) ethanol dissolved in a solvent like N-methyl pyrolidione at 65.degree. C. for sixty seconds. The hydroxyl amine solution may be sprayed onto the polyimide layer, or deposited by vapor deposition. The semiconductor die with the treated polyimide layer is attached to the substrate by standard DCA methods leaving a gap between the assemblies. The encapsulant is introduced between the semiconductor die and the substrate and cured to form a covalent bond with the polyimide layer and an environmental seal between the assemblies resulting in enhanced adhesion.

Abstract: A method for producing a coating composed of an electroless metal plate, such as a copper plate, tightly bonded to a polyimide layer comprises a multi-step cure of the polyimide layer carried out in combination with a palladium-catalyzed electroless deposition process. A solution of a polyamic acid compound that is the precursor for the desired polyimide resin in a vaporizable solvent is applied to a substrate and heated preferably to temperature below 250.degree. C., to form a soft-cured polyimide film. The film is immersed in an aqueous palladium-tin colloidal suspension to deposit the colloidal particles thereon, which particles are then activated to form palladium nuclei dspersed on the surface. The soft-cured film is then heated, preferably above about 250.degree. C., to vaporize residual solvent and form a hard-cured polyimide layer having the palladium nuclei dispersed on the surface.