Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

Abstract: A package structure includes a first substrate, a second substrate disposed on the first substrate, a third substrate disposed on the second substrate, and multiple chips mounted on the third substrate. A second coefficient of thermal expansion (CTE) of the second substrate is less than a first CTE of the first substrate. The third substrate includes a first sub-substrate, a second sub-substrate in the same level with the first sub-substrate, a third sub-substrate in the same level with the first sub-substrate. A CTE of the first sub-substrate, a CTE of the second sub-substrate, and a CTE of the third sub-substrate are less than the second CTE of the second substrate.

Abstract: A light emitting diode (LED) package structure includes a glass substrate, conductive through holes, active elements, an insulating layer, LEDs and pads. The glass substrate has an upper surface and a lower surface. The conductive through holes penetrate the glass substrate and connect the upper and the lower surfaces. The active elements are disposed on the upper surface of the glass substrate and electrically connected to the conductive through holes. The insulating layer is disposed on the upper surface and covers the active elements. The LEDs are disposed on the insulating layer and electrically connected to at least one of the active elements. The pads are disposed on the lower surface of the glass substrate and electrically connected to the conductive through holes. A source of at least one active elements is directly electrically connected to at least one of the corresponding pads through the corresponding conductive through hole.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A manufacturing method of a package structure includes: forming a redistribution layer on a top surface of a glass substrate; forming a protective layer on the top surface of the glass substrate; cutting the glass substrate and the protective layer such that the glass substrate has a cutting edge, in which a crack is formed in the cutting edge of the glass substrate; and heating the protective layer such that a portion of the protective layer flows towards a bottom surface of the glass substrate to cover the cutting edge of the glass substrate and fill the crack in the cutting edge of the glass substrate.

Abstract: The present invention provides an etching device which comprises an oxygen supplier, so that the etching device of the present invention can etch copper gently by means of the dissolved oxygen in the etching solution to accurately control the etching degree so as to fulfill the stricter requirements of microcircuit manufacturing. The present invention further provides an etching method. Finally, the etching waste solution of the present invention can be recycled to further ameliorate the environmental pollution and reduce the production cost, so the present invention is widely applicable in integrated circuit packaging.

Abstract: A manufacturing method of a package structure is provided, which includes the following steps. A carrier having a surface is provided. A copper foil layer is laminated on the surface of the carrier. A subtractive process is performed on the copper foil layer to form a copper foil circuit layer on the carrier. The copper foil circuit layer exposes a part of the surface of the carrier. A build-up structure layer is formed on the copper foil circuit layer and the surface of the carrier. A first surface of the copper foil circuit layer is aligned with a second surface of the build-up structure layer. At least one electronic component is disposed on the build-up structure layer. A package colloid is formed to cover the electronic component and the build-up structure layer. The carrier is removed to expose the first surface of the copper foil circuit layer.

Abstract: A chip packaging structure includes a chip, a redistribution layer, a solder ball, an encapsulant, and a stress buffer layer. The chip has an active surface and a back surface opposite to each other, and a peripheral surface connected to the active surface and the back surface. The redistribution layer is disposed on the active surface of the chip. The solder ball is disposed on the redistribution layer, and the chip is electrically connected to the solder ball through the redistribution layer. The encapsulant encapsulates the active surface and the back surface of the chip, the redistribution layer, and part of the solder ball. The stress buffer layer at least covers the peripheral surface of the chip. An outer surface of the stress buffer layer is aligned with a side surface of the encapsulant.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A package structure includes at least one first redistribution layer, at least one second redistribution layer, a chip pad, a solder ball pad, a chip, a solder ball, and a molding compound. The first redistribution layer includes a first dielectric layer and a first redistribution circuit that fills a first opening and a second opening of the first dielectric layer. The first dielectric layer is aligned with the first redistribution circuit. The second redistribution layer includes a second and a third dielectric layers and a second redistribution circuit. The third dielectric layer is aligned with the second redistribution circuit. The chip pad and the solder ball pad are electrically connected to the first and the second redistribution circuits respectively. The chip and the solder ball are disposed on the chip pad and the solder ball pad respectively. The molding compound at least covers the chip and the chip pad.

Abstract: A package structure includes a substrate, a plurality of conductive pads, a light-emitting diode, a photo imageable dielectric material, and a black matrix. The substrate includes a top surface. The conductive pads are located on the top surface of the substrate. The light-emitting diode is located on the conductive pads. The photo imageable dielectric material is located between the light-emitting diode and the top surface of the substrate and between the conductive pads. An orthogonal projection of the light-emitting diode on the substrate is overlapped with an orthogonal projection of the photo imageable dielectric material on the substrate. The black matrix is located on the top surface of the substrate and the conductive pads.

Abstract: The invention discloses a glass carrier having a protection structure, comprising a glass body and a protection layer. The glass body has a top surface, a bottom surface, and a lateral surface. The protection layer covers the lateral surface of the glass body. The protection layer is a hard material with a stiffness coefficient higher than a stiffness coefficient of the glass body. The invention further discloses a manufacturing method of a glass carrier having a protection structure, comprising the following steps: covering the protection layer around the lateral surface of the glass body, wherein the protection layer is the hard material with the stiffness coefficient higher than the stiffness coefficient of the glass body.

Abstract: A manufacturing method of a carrier structure includes: A build-up circuit layer is formed on a carrier. The build-up circuit layer includes at least one first circuit layer, at least one first dielectric layer, a second circuit layer, a second dielectric layer, and a plurality of conductive vias. The first circuit layer is located on the carrier and includes at least one first pad, which is disposed relative to at least one through hole of the carrier. The first dielectric layer is located on the first circuit layer. The second circuit layer is located on the first dielectric layer and includes at least one second pad. The second dielectric layer is located on the second circuit layer and includes at least one opening exposing the second pad. The conductive via penetrates the first dielectric layer and is electrically connected to the first circuit layer and the second circuit layer.

Abstract: A package structure includes a redistribution layer, a chip assembly, a plurality of solder balls, and a molding compound. The redistribution layer includes redistribution circuits, photoimageable dielectric layers, conductive through holes, and chip pads. One of the photoimageable dielectric layers located on opposite two outermost sides has an upper surface and openings. The chip pads are located on the upper surface and are electrically connected to the redistribution circuits through the conductive through holes. The openings expose portions of the redistribution circuits to define solder ball pads. Line widths and line spacings of the redistribution circuits decrease in a direction from the solder ball pads towards the chip pads. The chip assembly is disposed on the chip pads and includes at least two chips with different sizes. The solder balls are disposed on the solder ball pads, and the molding compound at least covers the chip assembly.

Abstract: A circuit board structure includes a first sub-board including a plurality of circuit patterns, a second sub-board including a plurality of pads, and a connecting structure layer having a plurality of through holes and including an insulating layer, first and second adhesive layers, and a plurality of conductive blocks. The first adhesive layer is directly connected to the first sub-board. The second adhesive layer is directly connected to the second sub-board. The through holes penetrate through the first adhesive layer, the insulating layer, and the second adhesive layer. The conductive blocks are located in the through holes. An upper surface and a lower surface of each conductive block are respectively lower than a first surface of the first adhesive layer and a second surface of the second adhesive layer relatively away from the insulating layer. Each circuit pattern contacts the upper surface, and each pad contacts the lower surface.

Abstract: A manufacturing method of a chip package structure includes the following steps. A plurality of chips is disposed on a first insulating layer. The back surface of each of the chips is in direct contact with the first insulating layer. A stress buffer layer is formed to extend and cover the active surface and the peripheral surface of each of the chips, and a bottom surface of the stress buffer layer is aligned with the back surface of each of the chips. The stress buffer layer has an opening exposing a part of the active surface of each of the chips, and the redistribution layer is electrically connected to each of the chips through the opening. A plurality of solder balls is electrically connected to the redistribution layer exposed by the blind holes. A singularizing process is performed to form a plurality of chip package structures separated from each other.

Abstract: A vapor chamber structure includes a thermally conductive shell, a capillary structure layer, and a working fluid. The thermally conductive shell includes a first thermally conductive portion and a second thermally conductive portion. The first thermally conductive portion and the second thermally conductive portion are a thermally conductive plate that is integrally formed, and the thermally conductive shell is formed by folding the thermally conductive plate in half and then sealing the thermally conductive plate. The first thermally conductive portion has at least one first cavity, the second thermally conductive portion has at least one second cavity. At least one sealed chamber is defined between the thermally conductive plate, the first cavity and the second cavity. A pressure in the sealed chamber is lower than a standard atmospheric pressure. The capillary structure layer covers an inner wall of the sealed chamber. The working fluid is filled in the sealed chamber.

Abstract: A circuit board structure includes a redistribution structure layer, a build-up circuit structure layer, and a connection structure layer. The redistribution structure layer has a first and second surface, and includes an inner and outer dielectric layer, first connecting pads, and chip pads. A bottom surface of each first connecting pad is aligned with the first surface, and the chip pads are protruded from and located on the second surface. The build-up circuit structure layer includes second connecting pads. The connection structure layer is disposed between the redistribution structure layer and the build-up circuit structure layer and includes a substrate and conductive paste pillars penetrating the substrate. The first connecting pads are electrically connected to the second connecting pads via the conductive paste pillars, respectively. A top surface of each conductive paste pillar is aligned with the first surface of the redistribution structure layer.

Abstract: A manufacturing method of a chip package structure includes the following steps. A plurality of chips is disposed on a first insulating layer. The back surface of each of the chips is in direct contact with the first insulating layer. A stress buffer layer is formed to extend and cover the active surface and the peripheral surface of each of the chips, and a bottom surface of the stress buffer layer is aligned with the back surface of each of the chips. The stress buffer layer has an opening exposing a part of the active surface of each of the chips, and the redistribution layer is electrically connected to each of the chips through the opening. A plurality of solder balls is electrically connected to the redistribution layer exposed by the blind holes. A singularizing process is performed to form a plurality of chip package structures separated from each other.