Patents by Inventor Pui-Fai Lee

Pui-Fai Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7585721
    Abstract: In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.
    Type: Grant
    Filed: May 9, 2005
    Date of Patent: September 8, 2009
    Assignee: The Hong Kong Polytechnic University
    Inventors: Jiyan Dai, Xubing Lu, Pui-Fai Lee
  • Publication number: 20060252202
    Abstract: In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.
    Type: Application
    Filed: May 9, 2005
    Publication date: November 9, 2006
    Inventors: Jiyan Dai, Xubing Lu, Pui-Fai Lee