Abstract: An oxygen barrier packaging material is provided. The packaging film includes a substrate polymer formed as a transparent and flexible film. An at least 75 percent light transmissive, oxygen barrier coating is formed on the substrate polymer transparent and flexible film. The oxygen barrier coating is formed from a composition that includes approximately 15 wt % to 35 wt % of a coating polymer in dry weight, approximately 0.1 wt % to 5 wt % of nanoparticles in dry weight, approximately 40 wt % to 75 wt % of a plasticizer in dry weight, and approximately 5 wt % to 20 wt % of a crosslinking agent in dry weight. The nanoparticles in the coating create a convoluted path for oxygen and the coating is stretchable and bendable with the substrate polymer.

Abstract: The present invention relates to a power semiconductor device structure and a fabrication process, and provides a high-performance RC-IGBT structure that can be fabricated without a thin wafer process. To achieve this objective, the present invention provides an RC-IGBT structure, including: an emitter electrode at the front surface; a plurality of cells under the emitter electrode; an n? drift region under the cells; a collector electrode located at the back surface; a plurality of trenches located at the back surface and being filled by the collector electrode; a mechanical support semiconductor region located between the trenches; a p+ collector region located at the top of each trench and connected to the collector electrode; an n buffer region located on top of each p+ collector region and below the n? drift region; and an n+ cathode region at the sidewall of each trench and connected to the collector electrode.

Abstract: The present invention relates to a power semiconductor device structure and a fabrication process, and provides a high-performance RC-IGBT structure that can be fabricated without a thin wafer process. To achieve this objective, the present invention provides an RC-IGBT structure, including: an emitter electrode at the front surface; a plurality of cells under the emitter electrode; an n? drift region under the cells; a collector electrode located at the back surface; a plurality of trenches located at the back surface and being filled by the collector electrode; a mechanical support semiconductor region located between the trenches; a p+ collector region located at the top of each trench and connected to the collector electrode; an n buffer region located on top of each p+ collector region and below the n? drift region; and an n+ cathode region at the sidewall of each trench and connected to the collector electrode.