Abstract: Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.