Patents by Inventor Pui Yee Joan Ho

Pui Yee Joan Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and structure for hydrogenation of silicon substrates with shaped covers
    Patent number: 8153887
    Abstract: Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.
    Type: Grant
    Filed: September 10, 2007
    Date of Patent: April 10, 2012
    Assignee: Silicon China (HK) Ltd.
    Inventors: Yick Chuen Chan, Pui Yee Joan Ho, Nathan W. Cheung, Man Wong, Chung Chan
  • Method and structure for hydrogenation of silicon substrates with shaped covers
    Patent number: 8143514
    Abstract: Method and structure for hydrogenation of silicon substrates with shaped covers. According to an embodiment, the present invention provides a method for fabricating a photovoltaic material. The method includes providing a semiconductor substrate. The method also includes forming a crystalline material characterized by a plurality of worm hole structures therein overlying the semiconductor substrate. The worm hole structures are characterized by a density distribution from a surface region of the crystalline material to a defined depth within a z-direction of the surface region to form a thickness of material to be detached. The method further includes providing a glue layer overlying a surface region of the crystalline material. The method includes joining the surface region of the crystalline material via the glue layer to a support substrate.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: March 27, 2012
    Assignee: Silicon China (HK) Limited
    Inventors: Yick Chuen Chan, Pui Yee Joan Ho, Nathan W. Cheung, Chung Chan