Patents by Inventor Puneet Bajaj

Puneet Bajaj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9818585
    Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: November 14, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Richard J. Green, Cheng-Hsiung Tsai, Shambhu N. Roy, Puneet Bajaj, David H. Loo
  • Patent number: 9023227
    Abstract: Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: May 5, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Jivko Dinev, Saravjeet Singh, Khalid M. Sirajuddin, Tong Liu, Puneet Bajaj, Rohit Mishra, Sonal A. Srivastava, Madhava Rao Yalamanchili, Ajay Kumar
  • Patent number: 8987140
    Abstract: The present disclosure provides methods for etching through-silicon vias (TSVs) in a substrate. The method employs a cyclic polymer passivation layer deposition, depassivation process and plasma etching process. By alternating the duration performed in the plasma etching process and the polymer passivation deposition process during the TSVs formation process, a good sidewall profile and via depth control may be obtained.
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: March 24, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Puneet Bajaj, Tong Liu, Khalid Mohiuddin Sirajuddin
  • Publication number: 20140366912
    Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.
    Type: Application
    Filed: May 16, 2014
    Publication date: December 18, 2014
    Applicant: Applied Materials, Inc.
    Inventors: Richard J. GREEN, Cheng-Hsiung TSAI, Shambhu N. ROY, Puneet BAJAJ, David H. LOO
  • Patent number: 8900471
    Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: December 2, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Richard J. Green, Cheng-hsiung Tsai, Shambhu N. Roy, Puneet Bajaj, David H. Loo
  • Publication number: 20140179108
    Abstract: Embodiments of the invention generally relate to an apparatus and method for plasma etching. In one embodiment, the apparatus includes a process ring with an annular step away from an inner wall of the ring and is disposed on a substrate support in a plasma process chamber. A gap is formed between the process ring and a substrate placed on the substrate support. The annular step has an inside surface having a height ranging from about 3 mm to about 6 mm. During operation, an edge-exclusion gas is introduced to flow through the gap and along the inside surface, so the plasma is blocked from entering the space near the edge of the substrate.
    Type: Application
    Filed: March 4, 2013
    Publication date: June 26, 2014
    Inventors: Dung Huu Le, Graeme Jamieson Scott, Jivko Dinev, Madhava Rao Yalamanchili, Khalid Mohiuddin Sirajuddin, Puneet Bajaj, Saravjeet Singh
  • Publication number: 20130005152
    Abstract: Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).
    Type: Application
    Filed: May 25, 2012
    Publication date: January 3, 2013
    Applicant: Applied Materials, Inc.
    Inventors: JIVKO DINEV, Saravjeet Singh, Khalid M. Sirajuddin, Tong Liu, Puneet Bajaj, Rohit Mishra, Sonal A. Srivastava, Madhava Rao Yalamanchili, Ajay Kumar
  • Publication number: 20120270404
    Abstract: The present disclosure provides methods for etching through-silicon vias (TSVs) in a substrate. The method employs a cyclic polymer passivation layer deposition, depassivation process and plasma etching process. By alternating the duration performed in the plasma etching process and the polymer passivation deposition process during the TSVs formation process, a good sidewall profile and via depth control may be obtained.
    Type: Application
    Filed: March 29, 2012
    Publication date: October 25, 2012
    Applicant: APPLIED MATERIALS, INC
    Inventors: Puneet Bajaj, Tong Liu, Khalid Mohiuddin Sirajuddin
  • Patent number: 8221602
    Abstract: A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downward from the body, and a mounting portion extending upwards from an upper surface of the body. In another embodiment, a process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one downwardly extending u-channel coupled to an outer portion of the body, an inner wall extending upward from an upper surface of an inner region of the body, and a substrate support ledge extending radially inward from the inner wall.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: July 17, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Karl Brown, Puneet Bajaj
  • Publication number: 20100218785
    Abstract: Methods and apparatus for in-situ plasma cleaning of a deposition chamber are provided. In one embodiment a method for plasma cleaning a deposition chamber without breaking vacuum is provided. The method comprises positioning a substrate on a susceptor disposed in the chamber and circumscribed by an electrically floating deposition ring, depositing a metal film on the substrate and the deposition ring in the chamber, grounding the metal film deposited on the deposition ring without breaking vacuum, and removing contaminants from the chamber with a plasma formed in the chamber without resputtering the metal film on the grounded deposition ring and without breaking vacuum.
    Type: Application
    Filed: February 16, 2010
    Publication date: September 2, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Richard J. Green, Cheng-Hsiung Tsai, Shambhu N. Roy, Puneet Bajaj, David H. Loo
  • Patent number: 7780789
    Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
    Type: Grant
    Filed: October 24, 2007
    Date of Patent: August 24, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Dien-Yeh Wu, Puneet Bajaj, Xiaoxiong Yuan, Steven H. Kim, Schubert S. Chu, Paul F. Ma, Joseph F. Aubuchon
  • Publication number: 20080141942
    Abstract: A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downward from the body, and a mounting portion extending upwards from an upper surface of the body. In another embodiment, a process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one downwardly extending u-channel coupled to an outer portion of the body, an inner wall extending upward from an upper surface of an inner region of the body, and a substrate support ledge extending radially inward from the inner wall.
    Type: Application
    Filed: December 12, 2007
    Publication date: June 19, 2008
    Inventors: Karl Brown, Puneet Bajaj
  • Publication number: 20080107809
    Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel extending along a central axis at a central portion of the chamber lid assembly and a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid assembly. The tapered bottom surface may be shaped and sized to substantially cover the substrate receiving surface. The chamber lid assembly further contains a conduit coupled to a gas passageway, another conduit coupled to another gas passageway, and both gas passageways circumvent the expanding channel. Each of the passageways has a plurality of inlets extending into the expanding channel and the inlets are positioned to provide a circular gas flow through the expanding channel.
    Type: Application
    Filed: October 24, 2007
    Publication date: May 8, 2008
    Inventors: Dien-Yeh Wu, Puneet Bajaj, Xiaoxiong Yuan, Steven Kim, Schubert Chu, Paul Ma, Joseph Aubuchon
  • Publication number: 20080102203
    Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing an expanding channel at a central portion of the chamber lid assembly, wherein an upper portion of the expanding channel extends substantially parallel along a central axis of the expanding channel, and an expanding portion of the expanding channel tapers away from the central axis. The chamber lid assembly further contains a conduit coupled to a gas inlet, another conduit coupled to another gas inlet, and both gas inlets are positioned to provide a circular gas flow through the expanding channel. In one example, the inner surface within the upper portion of the expanding channel has a lower mean surface roughness than the inner surface within the expanding portion of the expanding channel.
    Type: Application
    Filed: October 24, 2007
    Publication date: May 1, 2008
    Inventors: Dien-Yeh Wu, Puneet Bajaj, Xiaoxiong Yuan, Steven Kim, Schubert Chu, Paul Ma, Joseph Aubuchon
  • Publication number: 20080102208
    Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.
    Type: Application
    Filed: October 24, 2007
    Publication date: May 1, 2008
    Inventors: Dien-Yeh Wu, Puneet Bajaj, Xiaoxiong Yuan, Steven Kim, Schubert Chu, Paul Ma, Joseph Aubuchon