Abstract: The present invention relates to a compound according to Formula (1a) or (1b): wherein R1; R3; Y and X are defined herein, and their use in methods of nucleic acid synthesis.

Abstract: A system of one or more computers can be configured to facilitate the design of a service. The disclosed system may operate to add a process block to a service design structure for the service. The process block is provided to a trained AI/ML process prediction model. The trained AI/ML process prediction model suggests one or more further process blocks for addition to the service design structure based, at least in part, on the addition of the process block to the service design structure. In certain embodiments, a process block is selected from the suggested one or more further process blocks and added to the service design structure. Other embodiments of this aspect of the disclosure include corresponding computer systems, apparatus, and computer programs recorded on one or more computer storage devices, each configured to perform the actions of the methods.

Abstract: A method being implemented via execution of computing instructions configured to run at one or more processors. The method can include determining a primary store and one or more secondary stores for pickup of an order of a user, based at least in part on a pickup type of the order. The method also can include determining real-time availabilities of first time slots at the primary store and real-time availabilities of second time slots at the one or more secondary stores. The method additionally can include generating a list of available time slots comprising at least a portion of the first time slots at the primary store and at least a portion of the second time slots at the one or more secondary stores, based at least in part on the real-time availabilities of the first time slots at the primary store and the real-time availabilities of the second time slots at the one or more secondary stores.

Abstract: A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

Abstract: This application relates to apparatus and methods for determining delivery prices for, and the assigning of, order deliveries. In some examples, a computing device may obtain order data identifying an order for delivery. The computing device may transmit a request to deliver the order for a first price to a first driver. The computing device may determine that a response to the request has not been received, and obtain risk values corresponding to identified delivery request acceptance risk factors. The risk factors may include location based risk factors, delivery time risk factors, driver supply risk factors, and time deadline risk factors. The computing device may determine a second price based on the first price and the risk values by executing one or more algorithms. The computing device may then transmit another request to deliver the order for the second price to a second driver.

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Abstract: A hybrid silicon carbide (SiC) device includes a first device structure having a first substrate comprising SiC of a first conductivity type and a first SiC layer of the first conductivity type, where the first SiC layer is formed on a face of the first substrate. The first device structure also includes a second SiC layer of a second conductivity type that is formed on a face of the first SiC layer and a first contact region of the first conductivity type, where the first contact region traverses the second SiC layer and contacts the first SiC. The device also includes a second device structure that is bonded to the first device structure. The second device structure includes a switching device formed on a second substrate and a second contact region that traverses a first terminal region of the switching device and contacts the first contact region.

Abstract: A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

Abstract: Gallium nitride-based monolithic microwave integrated circuits (MMICs) can comprise aluminum-based metals. Electrical contacts for gates, sources, and drains of transistors can include aluminum-containing metallic materials. Additionally, connectors, inductors, and interconnect devices can also comprise aluminum-based metals. The gallium-based MMICs can be manufactured in complementary metal oxide semiconductor (CMOS) facilities with equipment that produces silicon-based semiconductor devices.

Abstract: A semiconductor device includes a layer of a first semiconducting material, where the first semiconducting material is epitaxially grown to have a crystal structure of a first substrate. The semiconductor device further includes a layer of a second semiconducting material disposed adjacent to the layer of the first semiconducting material to form a heterojunction with the layer of the first semiconducting material. The semiconductor device further includes a first component that is electrically coupled to the heterojunction, and a second substrate that is bonded to the layer of the first semiconducting material.

Abstract: This application relates to apparatus and methods for determining, assigning, and displaying order deliveries. In some examples, a computing device may obtain order data identifying at least one order for delivery during a timeslot. The computing device may transmit, to a driver's computing device, a request for deliveries for a first price during the timeslot. The computing device may receive, from the driver's computing device, a response accepting the request. The computing device may then assign the driver to the order, and determine a delivery status based on the assignment of the first driver to the first order. The delivery status may identify, for example, that the order has been assigned to the driver, an estimated delivery time, the number of items being delivered, the weight of the items, and a route taken by the driver. The computing device may also display the delivery status.

Abstract: A hybrid silicon carbide (SiC) device includes a first device structure having a first substrate comprising SiC of a first conductivity type and a first SiC layer of the first conductivity type, where the first SiC layer is formed on a face of the first substrate. The first device structure also includes a second SiC layer of a second conductivity type that is formed on a face of the first SiC layer and a first contact region of the first conductivity type, where the first contact region traverses the second SiC layer and contacts the first SiC. The device also includes a second device structure that is bonded to the first device structure. The second device structure includes a switching device formed on a second substrate and a second contact region that traverses a first terminal region of the switching device and contacts the first contact region.

Abstract: A hybrid silicon carbide (SiC) device includes a first device structure having a first substrate comprising SiC of a first conductivity type and a first SiC layer of the first conductivity type, where the first SiC layer is formed on a face of the first substrate. The first device structure also includes a second SiC layer of a second conductivity type that is formed on a face of the first SiC layer and a first contact region of the first conductivity type, where the first contact region traverses the second SiC layer and contacts the first SiC. The device also includes a second device structure that is bonded to the first device structure. The second device structure includes a switching device formed on a second substrate and a second contact region that traverses a first terminal region of the switching device and contacts the first contact region.

Abstract: A semiconductor device having a back-side field plate includes a buffer layer that includes a first compound semiconductor material, where the buffer layer is epitaxial to a crystalline substrate. The semiconductor device also includes field plate layer that is disposed on a surface of the buffer layer. The semiconductor device further includes a first channel layer disposed over the field plate layer, where the first channel layer includes the first compound semiconductor material. The semiconductor device further includes a region comprising a two-dimensional electron gas, where the two-dimensional electron gas is formed at an interface between the first channel layer and a second channel layer. The semiconductor device additionally includes a back-side field plate that is formed by a region of the field plate layer and is electrically isolated from other regions of the field plate layer.

Abstract: A method being implemented via execution of computing instructions configured to run at one or more processors. The method can include determining a primary store and one or more secondary stores for pickup of an order of a user, based at least in part on a pickup type of the order. The method also can include determining real-time availabilities of first time slots at the primary store and real-time availabilities of second time slots at the one or more secondary stores. The method additionally can include generating a list of available time slots comprising at least a portion of the first time slots at the primary store and at least a portion of the second time slots at the one or more secondary stores, based at least in part on the real-time availabilities of the first time slots at the primary store and the real-time availabilities of the second time slots at the one or more secondary stores.

Abstract: A method including facilitating display of a first user interface to a controller. The first user interface can include fields that allow the controller to specify customizable parameters for shaping demand. The acts also can include receiving the customizable parameters from the controller. The acts additionally can include generating a historic utilization ranking corresponding to pickup time slots. The acts further can include determining in real-time a respective current utilization of each respective time slot of the pickup time slots. The acts additionally can include assigning the each respective time slot to a respective usage tier of usage tiers based at least in part on (1) a respective rank of the historic utilization ranking for the each respective time slot, (2) the respective current utilization of the each respective time slot, and (3) the customizable parameters. The acts further can include facilitating display of a second user interface to a customer.

Abstract: An enhancement mode compound semiconductor field-effect transistor (FET) includes a source, a drain, and a gate located therebetween. The transistor further includes a first gallium nitride-based hetero-interface located under the gate and a buried region, located under the first hetero-interface, the buried p-type region configured to determine an enhancement mode FET turn-on threshold voltage to permit current flow between the source and the drain.

Abstract: A system of one or more computers can be configured to facilitate the design of a service. The disclosed system may operate to add a process block to a service design structure for the service. The process block is provided to a trained AI/ML process prediction model. The trained AI/ML process prediction model suggests one or more further process blocks for addition to the service design structure based, at least in part, on the addition of the process block to the service design structure. In certain embodiments, a process block is selected from the suggested one or more further process blocks and added to the service design structure. Other embodiments of this aspect of the disclosure include corresponding computer systems, apparatus, and computer programs recorded on one or more computer storage devices, each configured to perform the actions of the methods.

Abstract: Integrated circuits can include semiconductor devices with back-side field plates. The semiconductor devices can be formed on substrates that have conductive layers located within the substrates. The conductive layers can include at least one of a conducting material or a semi-conducting material that modifies an electric field produced by the semiconductor devices. The semiconductor devices can include one or more semiconductor layers that include one or more materials having a compound material that includes at least one Group 13 element and at least one Group 15 element.