Patents by Inventor Purakh R. Verma

Purakh R. Verma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200006111
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact structures to deep trench isolation structures and methods of manufacture. The structure includes: a deep trench structure lined with insulator material on sidewalls thereof; conductive material filling the deep trench structure; a local oxide extending above the trench on exposed portions of the insulator material; an interlevel dielectric material on the local oxide and the conductive material filling the deep trench structure; and a contact in the interlevel dielectric material, extending to the conductive material and on a side of the local oxide.
    Type: Application
    Filed: June 28, 2018
    Publication date: January 2, 2020
    Inventors: Ke DONG, Purakh R. VERMA, Shiang Yang ONG, Namchil MUN
  • Patent number: 10504768
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to contact structures to deep trench isolation structures and methods of manufacture. The structure includes: a deep trench structure lined with insulator material on sidewalls thereof; conductive material filling the deep trench structure; a local oxide extending above the trench on exposed portions of the insulator material; an interlevel dielectric material on the local oxide and the conductive material filling the deep trench structure; and a contact in the interlevel dielectric material, extending to the conductive material and on a side of the local oxide.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: December 10, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Ke Dong, Purakh R. Verma, Shiang Yang Ong, Namchil Mun